TY - JOUR
T1 - AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H
AU - Rojas-López, M.
AU - Orduña-Díaz, A.
AU - Delgado-Macuil, R.
AU - Olvera-Hernández, J.
AU - Navarro-Contreras, H.
AU - Vidal, M. A.
AU - Saucedo, N.
AU - Mendez-García, V. H.
PY - 2007/4
Y1 - 2007/4
N2 - Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si: H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm -1 associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm -1 with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films.
AB - Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si: H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm -1 associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm -1 with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films.
UR - http://www.scopus.com/inward/record.url?scp=34547225204&partnerID=8YFLogxK
U2 - 10.1002/pssa.200674146
DO - 10.1002/pssa.200674146
M3 - Artículo
AN - SCOPUS:34547225204
SN - 1862-6300
VL - 204
SP - 1014
EP - 1017
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 4
ER -