A study by GISAXS of PbTe/SiO2 multilayer deposited on Si(111)

G. Kellermann, E. Rodriguez, E. Jimenez, E. Chillcce, C. L. César, L. C. Barbosa

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternatively use of Laser Ablation and Plasma Enhanced Chemical Vapor Deposition techniques. A set o samples containing different PbTe nanoparticles sizes was prepared for the study. The morphological properties of the nanostructured material were studied by means of grazing-incidence small-angle X-ray scattering (GISAXS) and x-ray reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles.

Idioma originalInglés
Título de la publicación alojadaQuantum Dots, Particles, and Nanoclusters IV
DOI
EstadoPublicada - 2007
Publicado de forma externa
EventoQuantum Dots, Particles, and Nanoclusters IV - San Jose, CA, Estados Unidos
Duración: 22 ene. 200723 ene. 2007

Serie de la publicación

NombreProceedings of SPIE - The International Society for Optical Engineering
Volumen6481
ISSN (versión impresa)0277-786X

Conferencia

ConferenciaQuantum Dots, Particles, and Nanoclusters IV
País/TerritorioEstados Unidos
CiudadSan Jose, CA
Período22/01/0723/01/07

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