Crystallization mechanism in films along GeTe-SbTe pseudo-binary line

E. Morales-Sanchez, E. Prokhorov, J. A. Muñoz Salas, J. González-Hernández, G. Trapaga

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Resumen

The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb2Te3 line with composition Ge2Sb2Te5, Ge1Sb2Te 4, Ge1Sb4Te7 and Ge 4Sb1Te5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge2Sb2Te 5 and Ge1Sb2Te4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge1Sb 4Te7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4Sb1Te5 and Ge1Sb4Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.

Idioma originalInglés
Título de la publicación alojada2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
DOI
EstadoPublicada - 2009
Publicado de forma externa
Evento2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009 - Toluca, México
Duración: 10 nov. 200913 nov. 2009

Serie de la publicación

Nombre2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

Conferencia

Conferencia2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
País/TerritorioMéxico
CiudadToluca
Período10/11/0913/11/09

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