ZnIn2S4 as a window in heterojunction solar cells

O. Vigil; O. Calzadilla; D. Seuret; J. Vidal; F. Leccabue

doi:10.1016/0165-1633(84)90056-X

ZnIn₂S₄ as a window in heterojunction solar cells

O. Vigil, O. Calzadilla, D. Seuret, J. Vidal, F. Leccabue

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Abstract

Single crystals of n-type ZnIn₂S₄ with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn₂S₄/p-CuInSe₂ system has been characterized and discussed.

Original language	English
Pages (from-to)	139-143
Number of pages	5
Journal	Solar Energy Materials
Volume	10
Issue number	2
DOIs	https://doi.org/10.1016/0165-1633(84)90056-X
State	Published - 1984
Externally published	Yes

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@article{0179537d5f1642d29a303d023fcd30b7,

title = "ZnIn2S4 as a window in heterojunction solar cells",

abstract = "Single crystals of n-type ZnIn2S4 with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn2S4/p-CuInSe2 system has been characterized and discussed.",

author = "O. Vigil and O. Calzadilla and D. Seuret and J. Vidal and F. Leccabue",

year = "1984",

doi = "10.1016/0165-1633(84)90056-X",

language = "Ingl{\'e}s",

volume = "10",

pages = "139--143",

journal = "Solar Energy Materials",

issn = "0165-1633",

number = "2",

}

TY - JOUR

T1 - ZnIn2S4 as a window in heterojunction solar cells

AU - Vigil, O.

AU - Calzadilla, O.

AU - Seuret, D.

AU - Vidal, J.

AU - Leccabue, F.

PY - 1984

Y1 - 1984

N2 - Single crystals of n-type ZnIn2S4 with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn2S4/p-CuInSe2 system has been characterized and discussed.

AB - Single crystals of n-type ZnIn2S4 with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn2S4/p-CuInSe2 system has been characterized and discussed.

UR - http://www.scopus.com/inward/record.url?scp=0021446973&partnerID=8YFLogxK

U2 - 10.1016/0165-1633(84)90056-X

DO - 10.1016/0165-1633(84)90056-X

M3 - Artículo

SN - 0165-1633

VL - 10

SP - 139

EP - 143

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 2

ER -

ZnIn₂S₄ as a window in heterojunction solar cells

Abstract

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