Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system

Mario Alfredo Reyes Barranca, Salvador Mendoza-Acevedo, Luis M. Flores-Nava, Alejandro Avila-García, E. N. Vazquez-Acosta, José Antonio Moreno-Cadenas, Gaspar Casados-Cruz

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane. © 2010 by the authors; licensee MDPI, Basel, Switzerland.
Original languageAmerican English
Pages (from-to)10413-10434
Number of pages22
JournalSensors (Switzerland)
DOIs
StatePublished - 1 Nov 2010
Externally publishedYes

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Micro-Electrical-Mechanical Systems
MOSFET devices
Transducers
floating
microelectromechanical systems
MEMS
transducers
transistors
Gases
Technology
Chemical reactions
Electronic equipment
gases
chemical reactions
Propane
Temperature
Thermal insulation
Sensors
Switzerland
thermal insulation

Cite this

Barranca, M. A. R., Mendoza-Acevedo, S., Flores-Nava, L. M., Avila-García, A., Vazquez-Acosta, E. N., Moreno-Cadenas, J. A., & Casados-Cruz, G. (2010). Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system. Sensors (Switzerland), 10413-10434. https://doi.org/10.3390/s101110413
Barranca, Mario Alfredo Reyes ; Mendoza-Acevedo, Salvador ; Flores-Nava, Luis M. ; Avila-García, Alejandro ; Vazquez-Acosta, E. N. ; Moreno-Cadenas, José Antonio ; Casados-Cruz, Gaspar. / Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system. In: Sensors (Switzerland). 2010 ; pp. 10413-10434.
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Barranca, MAR, Mendoza-Acevedo, S, Flores-Nava, LM, Avila-García, A, Vazquez-Acosta, EN, Moreno-Cadenas, JA & Casados-Cruz, G 2010, 'Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system', Sensors (Switzerland), pp. 10413-10434. https://doi.org/10.3390/s101110413

Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system. / Barranca, Mario Alfredo Reyes; Mendoza-Acevedo, Salvador; Flores-Nava, Luis M.; Avila-García, Alejandro; Vazquez-Acosta, E. N.; Moreno-Cadenas, José Antonio; Casados-Cruz, Gaspar.

In: Sensors (Switzerland), 01.11.2010, p. 10413-10434.

Research output: Contribution to journalArticle

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Barranca MAR, Mendoza-Acevedo S, Flores-Nava LM, Avila-García A, Vazquez-Acosta EN, Moreno-Cadenas JA et al. Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system. Sensors (Switzerland). 2010 Nov 1;10413-10434. https://doi.org/10.3390/s101110413