Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities

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Abstract

© 2018 Roberto Baca Arroyo. The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. The operating modes suggested with equations governing circuit performance are derived considering transient analysis. The relationship between material properties and equivalent circuit is discussed from a physical viewpoint. Theoretical solution of the equations yields a graphical response as approximation of the experimental results obtained from a proposed circuit built with an inductor and an NPN silicon MPSH10 transistor. Hence, the impurities-controlled electrical properties indicate that the observed unusual operation can be a good strategy to optimize signal processing in electronics.
Original languageAmerican English
JournalAdvances in Condensed Matter Physics
DOIs
StatePublished - 1 Jan 2018

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junction transistors
silicon transistors
impurities
silicon junctions
inductors
equivalent circuits
signal processing
electrical properties
methodology
approximation
electronics

Cite this

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title = "Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities",
abstract = "{\circledC} 2018 Roberto Baca Arroyo. The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. The operating modes suggested with equations governing circuit performance are derived considering transient analysis. The relationship between material properties and equivalent circuit is discussed from a physical viewpoint. Theoretical solution of the equations yields a graphical response as approximation of the experimental results obtained from a proposed circuit built with an inductor and an NPN silicon MPSH10 transistor. Hence, the impurities-controlled electrical properties indicate that the observed unusual operation can be a good strategy to optimize signal processing in electronics.",
author = "Arroyo, {Roberto Baca}",
year = "2018",
month = "1",
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doi = "10.1155/2018/4237686",
language = "American English",
journal = "Advances in Condensed Matter Physics",
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AB - © 2018 Roberto Baca Arroyo. The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. The operating modes suggested with equations governing circuit performance are derived considering transient analysis. The relationship between material properties and equivalent circuit is discussed from a physical viewpoint. Theoretical solution of the equations yields a graphical response as approximation of the experimental results obtained from a proposed circuit built with an inductor and an NPN silicon MPSH10 transistor. Hence, the impurities-controlled electrical properties indicate that the observed unusual operation can be a good strategy to optimize signal processing in electronics.

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JO - Advances in Condensed Matter Physics

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