Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

M. Enciso, F. Aniel, P. Crozat, L. Giguerre, R. Adde, M. Zeuner, G. Höck, A. Fox

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

© 2001 Non IEEE. Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.
Original languageAmerican English
Pages443-446
Number of pages398
DOIs
StatePublished - 1 Jan 2001
Externally publishedYes
EventEuropean Solid-State Device Research Conference -
Duration: 1 Jan 2001 → …

Conference

ConferenceEuropean Solid-State Device Research Conference
Period1/01/01 → …

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High electron mobility transistors

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Enciso, M., Aniel, F., Crozat, P., Giguerre, L., Adde, R., Zeuner, M., ... Fox, A. (2001). Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. 443-446. Paper presented at European Solid-State Device Research Conference, . https://doi.org/10.1109/ESSDERC.2001.195296
Enciso, M. ; Aniel, F. ; Crozat, P. ; Giguerre, L. ; Adde, R. ; Zeuner, M. ; Höck, G. ; Fox, A. / Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. Paper presented at European Solid-State Device Research Conference, .398 p.
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Enciso, M, Aniel, F, Crozat, P, Giguerre, L, Adde, R, Zeuner, M, Höck, G & Fox, A 2001, 'Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs', Paper presented at European Solid-State Device Research Conference, 1/01/01 pp. 443-446. https://doi.org/10.1109/ESSDERC.2001.195296

Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. / Enciso, M.; Aniel, F.; Crozat, P.; Giguerre, L.; Adde, R.; Zeuner, M.; Höck, G.; Fox, A.

2001. 443-446 Paper presented at European Solid-State Device Research Conference, .

Research output: Contribution to conferencePaper

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AU - Enciso, M.

AU - Aniel, F.

AU - Crozat, P.

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AU - Zeuner, M.

AU - Höck, G.

AU - Fox, A.

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AB - © 2001 Non IEEE. Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.

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Enciso M, Aniel F, Crozat P, Giguerre L, Adde R, Zeuner M et al. Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. 2001. Paper presented at European Solid-State Device Research Conference, . https://doi.org/10.1109/ESSDERC.2001.195296