Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

M. Enciso; F. Aniel; P. Crozat; L. Giguerre; R. Adde; M. Zeuner; G. Höck; A. Fox

doi:10.1109/ESSDERC.2001.195296

Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

M. Enciso, F. Aniel, P. Crozat, L. Giguerre, R. Adde, M. Zeuner, G. Höck, A. Fox

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like f_T = 49 GHz, f_MAX = 60 GHz, g_mmax = 715 mS/mm and NF_min = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave f_T = 55 GHz, f_MAX = 135 GHz, g_mmax = 250 mS/mm, and NF_min = 0.5 dB at 2.5 GHz.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
Publisher	IEEE Computer Society
Pages	443-446
Number of pages	4
ISBN (Electronic)	2914601018
DOIs	https://doi.org/10.1109/ESSDERC.2001.195296
State	Published - 2001
Externally published	Yes
Event	31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 11 Sep 2001 → 13 Sep 2001

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	31st European Solid-State Device Research Conference, ESSDERC 2001
Country/Territory	Germany
City	Nuremberg
Period	11/09/01 → 13/09/01

Access to Document

10.1109/ESSDERC.2001.195296

Cite this

Enciso, M., Aniel, F., Crozat, P., Giguerre, L., Adde, R., Zeuner, M., Höck, G., & Fox, A. (2001). Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. In H. Ryssel, G. Wachutka, & H. Grunbacher (Eds.), European Solid-State Device Research Conference (pp. 443-446). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2001.195296

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title = "Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs",

abstract = "Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.",

author = "M. Enciso and F. Aniel and P. Crozat and L. Giguerre and R. Adde and M. Zeuner and G. H{\"o}ck and A. Fox",

note = "Publisher Copyright: {\textcopyright} 2001 Non IEEE.; 31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",

year = "2001",

doi = "10.1109/ESSDERC.2001.195296",

language = "Ingl{\'e}s",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

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Enciso, M, Aniel, F, Crozat, P, Giguerre, L, Adde, R, Zeuner, M, Höck, G & Fox, A 2001, Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. in H Ryssel, G Wachutka & H Grunbacher (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 443-446, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 11/09/01. https://doi.org/10.1109/ESSDERC.2001.195296

Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs. / Enciso, M.; Aniel, F.; Crozat, P. et al.
European Solid-State Device Research Conference. ed. / Heiner Ryssel; Gerhard Wachutka; Herbert Grunbacher. IEEE Computer Society, 2001. p. 443-446 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

AU - Enciso, M.

AU - Aniel, F.

AU - Crozat, P.

AU - Giguerre, L.

AU - Adde, R.

AU - Zeuner, M.

AU - Höck, G.

AU - Fox, A.

PY - 2001

Y1 - 2001

N2 - Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.

AB - Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.

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M3 - Contribución a la conferencia

AN - SCOPUS:84907506106

T3 - European Solid-State Device Research Conference

SP - 443

EP - 446

BT - European Solid-State Device Research Conference

A2 - Ryssel, Heiner

A2 - Wachutka, Gerhard

A2 - Grunbacher, Herbert

PB - IEEE Computer Society

T2 - 31st European Solid-State Device Research Conference, ESSDERC 2001

Y2 - 11 September 2001 through 13 September 2001

ER -

Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

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