TY - JOUR
T1 - Threshold voltage reliability in flexible amorphous In-Ga-ZnO TFTs under simultaneous electrical and mechanical stress
AU - Toledo, Pablo
AU - Hernandez-Pichardo, Martha Leticia
AU - Garduño, Salvador Ivan
AU - Hernandez-Lopez, Jose Luis
AU - Hernandez-Cuevas, Francisco
AU - Hernandez-Como, Norberto
N1 - Publisher Copyright:
© 2022 IOP Publishing Ltd.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - Flexible amorphous In-Ga-ZnO (a-IGZO) thin film transistors (TFTs) have been successfully demonstrated on 50 μm thick freestanding polyimide (PI) with μ sat around 10 cm2 V-1 s-1. In the literature, common characterization of flexible TFTs consist of measuring their electrical response at different bending radius or under positive and negative gate bias stress (PBS and NBS). However, there are few studies where the flexible TFTs have been measured with a simultaneous mechanical and electrical stress. In this work, simultaneous testing under electrical and mechanical stress were carried out with a gate bias stress voltage of ±6 V during 3600 s, and with a tensile bending radius of 1, 2 and 4 mm. a-IGZO TFTs bottom gate-top contacts were fabricated on commercial Kapton HN PI by a complete photolithography process. All the PBS and NBS characteristics presented an abnormal threshold voltage left shift which was mainly explained by the adsorption/desorption of water molecules at the back channel.
AB - Flexible amorphous In-Ga-ZnO (a-IGZO) thin film transistors (TFTs) have been successfully demonstrated on 50 μm thick freestanding polyimide (PI) with μ sat around 10 cm2 V-1 s-1. In the literature, common characterization of flexible TFTs consist of measuring their electrical response at different bending radius or under positive and negative gate bias stress (PBS and NBS). However, there are few studies where the flexible TFTs have been measured with a simultaneous mechanical and electrical stress. In this work, simultaneous testing under electrical and mechanical stress were carried out with a gate bias stress voltage of ±6 V during 3600 s, and with a tensile bending radius of 1, 2 and 4 mm. a-IGZO TFTs bottom gate-top contacts were fabricated on commercial Kapton HN PI by a complete photolithography process. All the PBS and NBS characteristics presented an abnormal threshold voltage left shift which was mainly explained by the adsorption/desorption of water molecules at the back channel.
KW - IGZO
KW - TFT
KW - flexible electronics
KW - gate bias stress
KW - reliability
KW - tensile bending
UR - http://www.scopus.com/inward/record.url?scp=85132558577&partnerID=8YFLogxK
U2 - 10.1088/2058-8585/ac7186
DO - 10.1088/2058-8585/ac7186
M3 - Artículo
AN - SCOPUS:85132558577
SN - 2058-8585
VL - 7
JO - Flexible and Printed Electronics
JF - Flexible and Printed Electronics
IS - 2
M1 - 025015
ER -