Thermal quenching of emission of self-assembled InAs quantum dots embedded into InGaAs/GaAs MQW

T. V. Torchynska, J. L. Casas Espinola, H. M.Alfaro Lopez, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper presents the investigation of PL bands connected with ground (GS) and multi excited states (ES) in highly uniform self-assembled InAs QDs using variable temperatures. Investigated QDs are embedded in In 0.15Ga0.85As/GaAs multi-quantum-well (MQW) structure. The types of GS and ES optical transitions are discussed as well.

Translated title of the contributionApagado térmico de la emisión de puntos cuánticos de InAs autoensamblados integrados en InGaAs/GaAs MQW
Original languageEnglish
Pages (from-to)69-71
Number of pages3
JournalInstitute of Physics Conference Series
Volume174
StatePublished - 2003
EventCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
Duration: 7 Oct 200210 Oct 2002

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