Abstract
This paper presents the investigation of PL bands connected with ground (GS) and multi excited states (ES) in highly uniform self-assembled InAs QDs using variable temperatures. Investigated QDs are embedded in In 0.15Ga0.85As/GaAs multi-quantum-well (MQW) structure. The types of GS and ES optical transitions are discussed as well.
Translated title of the contribution | Apagado térmico de la emisión de puntos cuánticos de InAs autoensamblados integrados en InGaAs/GaAs MQW |
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Original language | English |
Pages (from-to) | 69-71 |
Number of pages | 3 |
Journal | Institute of Physics Conference Series |
Volume | 174 |
State | Published - 2003 |
Event | Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: 7 Oct 2002 → 10 Oct 2002 |