Thermal oxidation of ultra thin palladium (Pd) foils at room conditions

O. García-Serrano, A. Andraca-Adame, R. Baca-Arroyo, R. Peña-Sierra, G. Romero-Paredes R.

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The formation and growth of Palladium Oxide (PdO) onto ultra thin Pd foil by thermal oxidation (TO) is discussed. TO is a flexible method to study the theory of volumetric Pd oxidation, considering the interfaces O 2-PdO and PdO-Pd phenomena. The kinetic of the PdO growth on ultra thin Pd foil, clearly shows that oxidation process is governed by a parabolic law, which is directly related to temperature and oxidation time parameters. Oxide thickness in the range of 30 nm to 60 m were development by TO. The XRD analysis on samples with different oxide thickness have shown a preferential growth at 2□ = 33.6° explained by the highest surface energy for this plane. The peak located at 2□ = 33.9° corresponding to (101) PdO direction, is the responsible of 2 allowed Raman modes reported for PdO, where the oxygen-phonon has a parallel motion to x and c axis. Ellipsometric measurement (EM) was a useful technique to study the early oxidation stage in a Pd foil. A theoretical study was done considering an existent 1 nm PdO layer. Hall measurements demonstrate the degenerated semiconductor behavior of PdO, because of the ultra short band gap in PdO, of around 0.8 eV.

Original languageEnglish
Title of host publicationCCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2011 - Merida, Yucatan, Mexico
Duration: 26 Oct 201128 Oct 2011

Publication series

NameCCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book

Conference

Conference2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2011
Country/TerritoryMexico
CityMerida, Yucatan
Period26/10/1128/10/11

Keywords

  • Metal oxide
  • Palladium oxide
  • Thermal oxidation
  • cationic vacancy
  • oxidation rate
  • p-semiconductor

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