TY - GEN
T1 - Thermal oxidation of ultra thin palladium (Pd) foils at room conditions
AU - García-Serrano, O.
AU - Andraca-Adame, A.
AU - Baca-Arroyo, R.
AU - Peña-Sierra, R.
AU - Romero-Paredes R., G.
PY - 2011
Y1 - 2011
N2 - The formation and growth of Palladium Oxide (PdO) onto ultra thin Pd foil by thermal oxidation (TO) is discussed. TO is a flexible method to study the theory of volumetric Pd oxidation, considering the interfaces O 2-PdO and PdO-Pd phenomena. The kinetic of the PdO growth on ultra thin Pd foil, clearly shows that oxidation process is governed by a parabolic law, which is directly related to temperature and oxidation time parameters. Oxide thickness in the range of 30 nm to 60 m were development by TO. The XRD analysis on samples with different oxide thickness have shown a preferential growth at 2□ = 33.6° explained by the highest surface energy for this plane. The peak located at 2□ = 33.9° corresponding to (101) PdO direction, is the responsible of 2 allowed Raman modes reported for PdO, where the oxygen-phonon has a parallel motion to x and c axis. Ellipsometric measurement (EM) was a useful technique to study the early oxidation stage in a Pd foil. A theoretical study was done considering an existent 1 nm PdO layer. Hall measurements demonstrate the degenerated semiconductor behavior of PdO, because of the ultra short band gap in PdO, of around 0.8 eV.
AB - The formation and growth of Palladium Oxide (PdO) onto ultra thin Pd foil by thermal oxidation (TO) is discussed. TO is a flexible method to study the theory of volumetric Pd oxidation, considering the interfaces O 2-PdO and PdO-Pd phenomena. The kinetic of the PdO growth on ultra thin Pd foil, clearly shows that oxidation process is governed by a parabolic law, which is directly related to temperature and oxidation time parameters. Oxide thickness in the range of 30 nm to 60 m were development by TO. The XRD analysis on samples with different oxide thickness have shown a preferential growth at 2□ = 33.6° explained by the highest surface energy for this plane. The peak located at 2□ = 33.9° corresponding to (101) PdO direction, is the responsible of 2 allowed Raman modes reported for PdO, where the oxygen-phonon has a parallel motion to x and c axis. Ellipsometric measurement (EM) was a useful technique to study the early oxidation stage in a Pd foil. A theoretical study was done considering an existent 1 nm PdO layer. Hall measurements demonstrate the degenerated semiconductor behavior of PdO, because of the ultra short band gap in PdO, of around 0.8 eV.
KW - Metal oxide
KW - Palladium oxide
KW - Thermal oxidation
KW - cationic vacancy
KW - oxidation rate
KW - p-semiconductor
UR - http://www.scopus.com/inward/record.url?scp=84855768385&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2011.6106122
DO - 10.1109/ICEEE.2011.6106122
M3 - Contribución a la conferencia
AN - SCOPUS:84855768385
SN - 9781457710117
T3 - CCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book
BT - CCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book
T2 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2011
Y2 - 26 October 2011 through 28 October 2011
ER -