The formation and growth of Palladium Oxide (PdO) onto ultra thin Pd foil by thermal oxidation (TO) is discussed. TO is a flexible method to study the theory of volumetric Pd oxidation, considering the interfaces O 2-PdO and PdO-Pd phenomena. The kinetic of the PdO growth on ultra thin Pd foil, clearly shows that oxidation process is governed by a parabolic law, which is directly related to temperature and oxidation time parameters. Oxide thickness in the range of 30 nm to 60 m were development by TO. The XRD analysis on samples with different oxide thickness have shown a preferential growth at 2□ = 33.6° explained by the highest surface energy for this plane. The peak located at 2□ = 33.9° corresponding to (101) PdO direction, is the responsible of 2 allowed Raman modes reported for PdO, where the oxygen-phonon has a parallel motion to x and c axis. Ellipsometric measurement (EM) was a useful technique to study the early oxidation stage in a Pd foil. A theoretical study was done considering an existent 1 nm PdO layer. Hall measurements demonstrate the degenerated semiconductor behavior of PdO, because of the ultra short band gap in PdO, of around 0.8 eV. © 2011 IEEE.
|Original language||American English|
|State||Published - 1 Dec 2011|
|Event||CCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book - |
Duration: 1 Dec 2011 → …
|Conference||CCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book|
|Period||1/12/11 → …|
García-Serrano, O., Andraca-Adame, A., Baca-Arroyo, R., Peña-Sierra, R., & Romero-Paredes R., G. (2011). Thermal oxidation of ultra thin palladium (Pd) foils at room conditions. Paper presented at CCE 2011 - 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, Program and Abstract Book, . https://doi.org/10.1109/ICEEE.2011.6106122