TY - JOUR
T1 - Synthesis of gallium nitride and related oxides via ammonobasic reactive sublimation (ARS)
AU - Hernández-Hernández, Luis Alberto
AU - Aguilar-Hernández, Jorge R.
AU - De Moure-Flores, Francisco
AU - De Melo-Pereira, Osvaldo
AU - Mejía-García, Concepción
AU - Cruz-Gandarilla, Francisco
AU - Contreras-Puente, Gerardo
N1 - Publisher Copyright:
© 2017.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH4OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH4OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH4OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.
AB - Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH4OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH4OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH4OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.
KW - Gallium nitride
KW - Gallium oxide
KW - Photoluminescence
KW - Sublimation
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=85033681532&partnerID=8YFLogxK
U2 - 10.1590/1980-5373-MR-2017-0311
DO - 10.1590/1980-5373-MR-2017-0311
M3 - Artículo
SN - 1516-1439
VL - 20
SP - 1707
EP - 1712
JO - Materials Research
JF - Materials Research
IS - 6
ER -