Suited growth parameters inducing type of conductivity conversions on chemical spray pyrolysis synthesized SnS thin films

Jacob A. Andrade-Arvizu, M. F. García-Sánchez, M. Courel-Piedrahita, F. Pulgarín-Agudelo, E. Santiago-Jaimes, E. Valencia-Resendiz, A. Arce-Plaza, O. Vigil-Galán

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.

Original languageEnglish
Pages (from-to)347-359
Number of pages13
JournalJournal of Analytical and Applied Pyrolysis
Volume121
DOIs
StatePublished - 1 Sep 2016

Keywords

  • Absorber material
  • Automated chemical spray pyrolysis
  • SnS thin films
  • p and n type conductivity

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