Suited growth parameters inducing type of conductivity conversions on chemical spray pyrolysis synthesized SnS thin films

Jacob A. Andrade-Arvizu, M. F. García-Sánchez, M. Courel-Piedrahita, F. Pulgarín-Agudelo, E. Santiago-Jaimes, E. Valencia-Resendiz, A. Arce-Plaza, O. Vigil-Galán

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

© 2016 Elsevier B.V. All rights reserved. Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.
Original languageAmerican English
Pages (from-to)347-359
Number of pages311
JournalJournal of Analytical and Applied Pyrolysis
DOIs
StatePublished - 1 Sep 2016

Fingerprint

Spray pyrolysis
pyrolysis
spray
conductivity
Thin films
Tin
Thiourea
tin
Thioureas
Band structure
Raman spectroscopy
Atomic force microscopy
Energy gap
Gases
Doping (additives)
atomic force microscopy
Scanning
absorption coefficient
Fabrication
X ray diffraction

Cite this

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title = "Suited growth parameters inducing type of conductivity conversions on chemical spray pyrolysis synthesized SnS thin films",
abstract = "{\circledC} 2016 Elsevier B.V. All rights reserved. Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.",
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Suited growth parameters inducing type of conductivity conversions on chemical spray pyrolysis synthesized SnS thin films. / Andrade-Arvizu, Jacob A.; García-Sánchez, M. F.; Courel-Piedrahita, M.; Pulgarín-Agudelo, F.; Santiago-Jaimes, E.; Valencia-Resendiz, E.; Arce-Plaza, A.; Vigil-Galán, O.

In: Journal of Analytical and Applied Pyrolysis, 01.09.2016, p. 347-359.

Research output: Contribution to journalArticle

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AU - Andrade-Arvizu, Jacob A.

AU - García-Sánchez, M. F.

AU - Courel-Piedrahita, M.

AU - Pulgarín-Agudelo, F.

AU - Santiago-Jaimes, E.

AU - Valencia-Resendiz, E.

AU - Arce-Plaza, A.

AU - Vigil-Galán, O.

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N2 - © 2016 Elsevier B.V. All rights reserved. Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.

AB - © 2016 Elsevier B.V. All rights reserved. Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.

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