TY - JOUR
T1 - Suited growth parameters inducing type of conductivity conversions on chemical spray pyrolysis synthesized SnS thin films
AU - Andrade-Arvizu, Jacob A.
AU - García-Sánchez, M. F.
AU - Courel-Piedrahita, M.
AU - Pulgarín-Agudelo, F.
AU - Santiago-Jaimes, E.
AU - Valencia-Resendiz, E.
AU - Arce-Plaza, A.
AU - Vigil-Galán, O.
N1 - Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/9/1
Y1 - 2016/9/1
N2 - Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.
AB - Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm2. Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p-type conductivity, a direct optical energy band gap of 1.3-1.7 eV and a high absorption coefficient (≥104/cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n-type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials.
KW - Absorber material
KW - Automated chemical spray pyrolysis
KW - SnS thin films
KW - p and n type conductivity
UR - http://www.scopus.com/inward/record.url?scp=84990841962&partnerID=8YFLogxK
U2 - 10.1016/j.jaap.2016.08.016
DO - 10.1016/j.jaap.2016.08.016
M3 - Artículo
SN - 0165-2370
VL - 121
SP - 347
EP - 359
JO - Journal of Analytical and Applied Pyrolysis
JF - Journal of Analytical and Applied Pyrolysis
ER -