Study of the properties of ZnO:Zn thin films obtained from ZnO/Zn/ZnO structure deposited by DC sputtering

M. A. Vasquez-A, O. Goiz, R. Baca-Arroyo, J. A. Andraca-Adame, G. Romero-Paredes, R. Peña-Sierra

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A method to manage the resistivity of n-type ZnO films is presented. It involves the controlled diffusion of Zn at low temperature in N2 atmosphere into the ZnO/Zn/ZnO structure. The structures were made by DC sputtering technique. The diffusion periods were varied from 5 to 30 min. This process allow us to obtain ZnO films with excess of Zn (ZnO:Zn). The electrical characterization showed that the resistivity of the films can be varied from 0.01 to 100 Ω-cm, the electron concentration from 1019 to 1017 cm-3 and the carrier mobility from 10 to 40 cm 2/V-s. The films are nanocrystalline with preferred (002) orientation and crystal size that varies from 13 to 20 nm depending on the diffusion period. The films have a band gap of 3.18 eV and 70% of transmittance in the visible region, these properties were obtained from the transmittance measurements of low-resistivity films. Films have good structural, optical and electrical properties, and could be used in the manufacture of light emitting diodes. Copyright © 2012 American Scientific Publishers All rights reserved.
Original languageAmerican English
Pages (from-to)9234-9237
Number of pages8310
JournalJournal of Nanoscience and Nanotechnology
DOIs
StatePublished - 1 Dec 2012
Externally publishedYes

Fingerprint

Sputtering
sputtering
direct current
Thin films
thin films
Atmosphere
electrical resistivity
transmittance
Electrons
Light
Temperature
Carrier mobility
carrier mobility
Crystal orientation
Light emitting diodes
Structural properties
Electric properties
Energy gap
light emitting diodes
Optical properties

Cite this

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title = "Study of the properties of ZnO:Zn thin films obtained from ZnO/Zn/ZnO structure deposited by DC sputtering",
abstract = "A method to manage the resistivity of n-type ZnO films is presented. It involves the controlled diffusion of Zn at low temperature in N2 atmosphere into the ZnO/Zn/ZnO structure. The structures were made by DC sputtering technique. The diffusion periods were varied from 5 to 30 min. This process allow us to obtain ZnO films with excess of Zn (ZnO:Zn). The electrical characterization showed that the resistivity of the films can be varied from 0.01 to 100 Ω-cm, the electron concentration from 1019 to 1017 cm-3 and the carrier mobility from 10 to 40 cm 2/V-s. The films are nanocrystalline with preferred (002) orientation and crystal size that varies from 13 to 20 nm depending on the diffusion period. The films have a band gap of 3.18 eV and 70{\%} of transmittance in the visible region, these properties were obtained from the transmittance measurements of low-resistivity films. Films have good structural, optical and electrical properties, and could be used in the manufacture of light emitting diodes. Copyright {\circledC} 2012 American Scientific Publishers All rights reserved.",
author = "Vasquez-A, {M. A.} and O. Goiz and R. Baca-Arroyo and Andraca-Adame, {J. A.} and G. Romero-Paredes and R. Pe{\~n}a-Sierra",
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Study of the properties of ZnO:Zn thin films obtained from ZnO/Zn/ZnO structure deposited by DC sputtering. / Vasquez-A, M. A.; Goiz, O.; Baca-Arroyo, R.; Andraca-Adame, J. A.; Romero-Paredes, G.; Peña-Sierra, R.

In: Journal of Nanoscience and Nanotechnology, 01.12.2012, p. 9234-9237.

Research output: Contribution to journalArticle

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N2 - A method to manage the resistivity of n-type ZnO films is presented. It involves the controlled diffusion of Zn at low temperature in N2 atmosphere into the ZnO/Zn/ZnO structure. The structures were made by DC sputtering technique. The diffusion periods were varied from 5 to 30 min. This process allow us to obtain ZnO films with excess of Zn (ZnO:Zn). The electrical characterization showed that the resistivity of the films can be varied from 0.01 to 100 Ω-cm, the electron concentration from 1019 to 1017 cm-3 and the carrier mobility from 10 to 40 cm 2/V-s. The films are nanocrystalline with preferred (002) orientation and crystal size that varies from 13 to 20 nm depending on the diffusion period. The films have a band gap of 3.18 eV and 70% of transmittance in the visible region, these properties were obtained from the transmittance measurements of low-resistivity films. Films have good structural, optical and electrical properties, and could be used in the manufacture of light emitting diodes. Copyright © 2012 American Scientific Publishers All rights reserved.

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