Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method

A. Orduña-Díaz; M. Rojas-López; V. L. Gayou; R. Delgado-Macuil; V. H. Méndez-García; R. E. Pérez-Blanco; E. Rosendo

doi:10.1117/12.591693

Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method

A. Orduña-Díaz, M. Rojas-López, V. L. Gayou, R. Delgado-Macuil, V. H. Méndez-García, R. E. Pérez-Blanco, E. Rosendo

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Conference article › peer-review

Abstract

Microcrystalline-amorphous doped hydrogenated silicon (μc n⁺ a-Si:H) samples were prepared by using plasma enhanced chemical vapor deposition (PECVD) method. The samples were deposited on coming substrates at 270°C and then were annealed at 250°C during several hours. Raman scattering spectroscopy was employed to study the amorphous-microcrystalline (μc/a) phase transition and the subsequent microcrystallization process as a function of the annealing time. It was found that the conductivity of the material is closely related to the normalized Raman intensity of the LO mode. In this work, such relation is explained in terms of the impurities activation and by the hydrogen effusion, which takes place during the annealing process. Samples morphology was characterized by atomic force microscopy (AFM). Crystallized silicon islands were observed with an average diameter depending on the annealing time.

Original language	English
Article number	289
Pages (from-to)	1540-1543
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5622
Issue number	PART 3
DOIs	https://doi.org/10.1117/12.591693
State	Published - 2004
Event	RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting - Porlamar, Venezuela, Bolivarian Republic of Duration: 3 Oct 2004 → 8 Oct 2004

Keywords

Amorphous silicon
Atomic force microscopy
PECVD
Raman scattering

Access to Document

10.1117/12.591693

Cite this

Orduña-Díaz, A., Rojas-López, M., Gayou, V. L., Delgado-Macuil, R., Méndez-García, V. H., Pérez-Blanco, R. E., & Rosendo, E. (2004). Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method. Proceedings of SPIE - The International Society for Optical Engineering, 5622(PART 3), 1540-1543. Article 289. https://doi.org/10.1117/12.591693

@article{8043da14109c4b51853245c88302a414,

title = "Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method",

abstract = "Microcrystalline-amorphous doped hydrogenated silicon (μc n+ a-Si:H) samples were prepared by using plasma enhanced chemical vapor deposition (PECVD) method. The samples were deposited on coming substrates at 270°C and then were annealed at 250°C during several hours. Raman scattering spectroscopy was employed to study the amorphous-microcrystalline (μc/a) phase transition and the subsequent microcrystallization process as a function of the annealing time. It was found that the conductivity of the material is closely related to the normalized Raman intensity of the LO mode. In this work, such relation is explained in terms of the impurities activation and by the hydrogen effusion, which takes place during the annealing process. Samples morphology was characterized by atomic force microscopy (AFM). Crystallized silicon islands were observed with an average diameter depending on the annealing time.",

keywords = "Amorphous silicon, Atomic force microscopy, PECVD, Raman scattering",

author = "A. Ordu{\~n}a-D{\'i}az and M. Rojas-L{\'o}pez and Gayou, {V. L.} and R. Delgado-Macuil and M{\'e}ndez-Garc{\'i}a, {V. H.} and P{\'e}rez-Blanco, {R. E.} and E. Rosendo",

year = "2004",

doi = "10.1117/12.591693",

language = "Ingl{\'e}s",

volume = "5622",

pages = "1540--1543",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

number = "PART 3",

note = "RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting ; Conference date: 03-10-2004 Through 08-10-2004",

}

Orduña-Díaz, A , Rojas-López, M , Gayou, VL , Delgado-Macuil, R, Méndez-García, VH, Pérez-Blanco, RE & Rosendo, E 2004, 'Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5622, no. PART 3, 289, pp. 1540-1543. https://doi.org/10.1117/12.591693

Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method. / Orduña-Díaz, A.; Rojas-López, M.; Gayou, V. L. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5622, No. PART 3, 289, 2004, p. 1540-1543.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method

AU - Orduña-Díaz, A.

AU - Rojas-López, M.

AU - Gayou, V. L.

AU - Delgado-Macuil, R.

AU - Méndez-García, V. H.

AU - Pérez-Blanco, R. E.

AU - Rosendo, E.

PY - 2004

Y1 - 2004

N2 - Microcrystalline-amorphous doped hydrogenated silicon (μc n+ a-Si:H) samples were prepared by using plasma enhanced chemical vapor deposition (PECVD) method. The samples were deposited on coming substrates at 270°C and then were annealed at 250°C during several hours. Raman scattering spectroscopy was employed to study the amorphous-microcrystalline (μc/a) phase transition and the subsequent microcrystallization process as a function of the annealing time. It was found that the conductivity of the material is closely related to the normalized Raman intensity of the LO mode. In this work, such relation is explained in terms of the impurities activation and by the hydrogen effusion, which takes place during the annealing process. Samples morphology was characterized by atomic force microscopy (AFM). Crystallized silicon islands were observed with an average diameter depending on the annealing time.

AB - Microcrystalline-amorphous doped hydrogenated silicon (μc n+ a-Si:H) samples were prepared by using plasma enhanced chemical vapor deposition (PECVD) method. The samples were deposited on coming substrates at 270°C and then were annealed at 250°C during several hours. Raman scattering spectroscopy was employed to study the amorphous-microcrystalline (μc/a) phase transition and the subsequent microcrystallization process as a function of the annealing time. It was found that the conductivity of the material is closely related to the normalized Raman intensity of the LO mode. In this work, such relation is explained in terms of the impurities activation and by the hydrogen effusion, which takes place during the annealing process. Samples morphology was characterized by atomic force microscopy (AFM). Crystallized silicon islands were observed with an average diameter depending on the annealing time.

KW - Amorphous silicon

KW - Atomic force microscopy

KW - PECVD

KW - Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=17644398405&partnerID=8YFLogxK

U2 - 10.1117/12.591693

DO - 10.1117/12.591693

M3 - Artículo de la conferencia

AN - SCOPUS:17644398405

SN - 0277-786X

VL - 5622

SP - 1540

EP - 1543

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - PART 3

M1 - 289

T2 - RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting

Y2 - 3 October 2004 through 8 October 2004

ER -

Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this