Sintered n-CuInSe2/Au Schottky diode

F. Leccabue; D. Seuret; O. Vigil

doi:10.1063/1.95862

Sintered n-CuInSe₂/Au Schottky diode

F. Leccabue, D. Seuret, O. Vigil

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Rectifying CuInSe₂/Au contacts were prepared by a vacuum evaporation of Au on n-type sintered CuInSe₂ samples in order to evaluate the electro-optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72-1.24-μm range has been obtained.

Original language	English
Pages (from-to)	853-855
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	9
DOIs	https://doi.org/10.1063/1.95862
State	Published - 1985
Externally published	Yes

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title = "Sintered n-CuInSe2/Au Schottky diode",

abstract = "Rectifying CuInSe2/Au contacts were prepared by a vacuum evaporation of Au on n-type sintered CuInSe2 samples in order to evaluate the electro-optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72-1.24-μm range has been obtained.",

author = "F. Leccabue and D. Seuret and O. Vigil",

year = "1985",

doi = "10.1063/1.95862",

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AU - Leccabue, F.

AU - Seuret, D.

AU - Vigil, O.

PY - 1985

Y1 - 1985

N2 - Rectifying CuInSe2/Au contacts were prepared by a vacuum evaporation of Au on n-type sintered CuInSe2 samples in order to evaluate the electro-optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72-1.24-μm range has been obtained.

AB - Rectifying CuInSe2/Au contacts were prepared by a vacuum evaporation of Au on n-type sintered CuInSe2 samples in order to evaluate the electro-optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72-1.24-μm range has been obtained.

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U2 - 10.1063/1.95862

DO - 10.1063/1.95862

M3 - Artículo

SN - 0003-6951

VL - 46

SP - 853

EP - 855

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Sintered n-CuInSe₂/Au Schottky diode

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