Silicio poroso: Propiedades electrónicas

M. R. Beltrán, C. Wang, M. Cruz, J. Tagüeña-Martínez

Research output: Contribution to journalArticle

Abstract

The electronic properties of porous silicon (p-Si) are studied by means of a supercell model with a tight-binding Hamiltonian and sp3s* atomic orbitals. The pores are modelled as empty columns digged in a crystalline silicon structure, passivated with hydrogens atoms. In this work, the band structure and the density of sates of p-Si are presented for different porosities. The results show that the energy gap increases with porosity, together with a shift of the conduction band minimum towards the Γ point, as a consequence of the quantum confinement.
Original languageAmerican English
Pages (from-to)155-157
Number of pages139
JournalRevista Mexicana de Fisica
StatePublished - 1 Jan 1999

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Beltrán, M. R., Wang, C., Cruz, M., & Tagüeña-Martínez, J. (1999). Silicio poroso: Propiedades electrónicas. Revista Mexicana de Fisica, 155-157.