Silicio poroso: Propiedades electrónicas

The electronic properties of porous silicon (p-Si) are studied by means of a supercell model with a tight-binding Hamiltonian and sp³s* atomic orbitals. The pores are modelled as empty columns digged in a crystalline silicon structure, passivated with hydrogens atoms. In this work, the band structure and the density of sates of p-Si are presented for different porosities. The results show that the energy gap increases with porosity, together with a shift of the conduction band minimum towards the Γ point, as a consequence of the quantum confinement.