Si-rich-SiO2 layers with high excess silicon content: Light emission and structural properties

L. Khomenkova, N. Korsunska, M. Baran, T. Stara, V. Yukhymchuk, T. Kryshtab, G. Gómez Gasga, A. Kryvko, Y. Goldstein, J. Jedrzejewski, E. Savir

Research output: Contribution to journalConference articlepeer-review

Abstract

Si-rich-SiO2 layers with high excess Si content grown by radio-frequency magnetron sputtering were studied by Raman scattering, X-Ray diffraction, electron paramagnetic resonance, and photoluminescence methods. It was found that high temperature annealing stimulates the formation of Si crystallites with preferred orientation in <111> direction. It was shown that the effect of crystallites orientation depends on excess Si content. Besides, comparable contribution of amorphous and crystalline silicon phases in the structure was observed for the annealed layers with Si excess more than 55%. It was observed that both crystalline and amorphous Si inclusions give the essential contribution to the photoluminescence spectra.

Translated title of the contributionCapas ricas en Si-SiO 2 con alto contenido en exceso de silicio: emisión de luz y propiedades estructurales
Original languageEnglish
Pages (from-to)147-159
Number of pages13
JournalPhysics Procedia
Volume2
Issue number2
DOIs
StatePublished - Aug 2009
Event2008 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter, ICL'08 - Lyon, France
Duration: 7 Jul 200811 Jul 2008

Keywords

  • Crystallites
  • EPR
  • Magnetron sputtering
  • Photoluminescence
  • XRD

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