TY - JOUR
T1 - Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1
T2 - A new theoretical procedure and comparison with other methodologies
AU - Rangel-Kuoppa, Victor Tapio
AU - Albor-Aguilera, Maria De Lourdes
AU - Hérnandez-Vásquez, César
AU - Flores-Márquez, José Manuel
AU - González-Trujillo, Miguel Angel
AU - Contreras-Puente, Gerardo Silverio
N1 - Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2018/3/12
Y1 - 2018/3/12
N2 - A new proposal for the extraction of the shunt resistance (R sh) and saturation current (I sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R s), the ideality factor (n) and an upper limit for I sat. In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R sh and I sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R sh, R s, n, I sat and the light current I lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.
AB - A new proposal for the extraction of the shunt resistance (R sh) and saturation current (I sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R s), the ideality factor (n) and an upper limit for I sat. In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R sh and I sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R sh, R s, n, I sat and the light current I lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.
KW - CIGS
KW - CdS
KW - CdTe
KW - parameter extraction
KW - saturation current
KW - shunt resistance
KW - solar cell
UR - http://www.scopus.com/inward/record.url?scp=85044927548&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aab017
DO - 10.1088/1361-6641/aab017
M3 - Artículo
SN - 0268-1242
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 4
M1 - 045007
ER -