Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1: A new theoretical procedure and comparison with other methodologies

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Abstract

A new proposal for the extraction of the shunt resistance (R sh) and saturation current (I sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R s), the ideality factor (n) and an upper limit for I sat. In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R sh and I sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R sh, R s, n, I sat and the light current I lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.

Original languageEnglish
Article number045007
JournalSemiconductor Science and Technology
Volume33
Issue number4
DOIs
StatePublished - 12 Mar 2018

Keywords

  • CIGS
  • CdS
  • CdTe
  • parameter extraction
  • saturation current
  • shunt resistance
  • solar cell

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