Energy band gap and optical absorption of  oriented Si nanowires with diverse square cross-sections are calculated by using the sp3s* semi-empirical tight-binding (TB) model with a supercell approach. Each surface dangling bond is saturated with a hydrogen atom. The results of the variation band gap are compared with those obtained by TB-sp3d 5s*, the density functional theory, and experimental data in agreement with the quantum confinement scheme. The imaginary part of the dielectric function is calculated by using the interconnected and free standing (without interconnection) models for the Si skeleton. This microscopic supercell model predicts the low frequency tail in the absorption spectrum, which appears even without the allowance for the indirect optical transitions.
|Original language||American English|
|Number of pages||197|
|State||Published - 1 Jan 2007|
|Event||Revista Mexicana de Fisica - |
Duration: 1 Jan 2007 → …
|Conference||Revista Mexicana de Fisica|
|Period||1/01/07 → …|
Miranda, A., Guzmán, D., Peréz-Meana, H. M., & Cruz-Irisson, M. (2007). Semiempirical supercell approach to calculate the electronic and optical properties of Si quantum wires. 220-224. Paper presented at Revista Mexicana de Fisica, .