TY - JOUR
T1 - Secondary phase formation in Zn-rich Cu2ZnSnSe4-based solar cells annealed in low pressure and temperature conditions
AU - Fairbrother, Andrew
AU - Fontané, Xavier
AU - Izquierdo-Roca, Victor
AU - Placidi, Marcel
AU - Sylla, Dioulde
AU - Espindola-Rodriguez, Moises
AU - Lõpez-Mariño, Simõn
AU - Pulgarín, Fabian A.
AU - Vigil-Galán, Osvaldo
AU - Pérez-Rodríguez, Alejandro
AU - Saucedo, Edgardo
PY - 2014/4
Y1 - 2014/4
N2 - Zn-rich Cu2ZnSnSe4 (CZTSe) films were prepared by a two-step process consisting in the DC-magnetron sputtering deposition of a metallic stack precursor followed by a reactive anneal under a Se + Sn containing atmosphere. Precursor composition and annealing temperature were varied in order to analyze their effects on the morphological, structural, and optoelectronic properties of the films and solar cell devices. Raman scattering measurements show the presence of ZnSe as the main secondary phase in the films, as well as the presence of SnSe at the back absorber region of the films processed with lower Zn-excess values and annealing temperatures. The ZnSe phase is found to accumulate more towards the surface of the absorber in samples with lower Zn-excess and lower temperature annealing, while increasing Zn-excess and annealing temperature promote its aggregation towards the back absorber region of the devices. These measurements indicate a strong dependence of these process variables in secondary phase formation and accumulation. In a preliminary optimization of both the composition and reactive annealing process, a solar cell with 4.8% efficiency has been fabricated, and potential mechanisms limiting device efficiency in these devices are discussed.
AB - Zn-rich Cu2ZnSnSe4 (CZTSe) films were prepared by a two-step process consisting in the DC-magnetron sputtering deposition of a metallic stack precursor followed by a reactive anneal under a Se + Sn containing atmosphere. Precursor composition and annealing temperature were varied in order to analyze their effects on the morphological, structural, and optoelectronic properties of the films and solar cell devices. Raman scattering measurements show the presence of ZnSe as the main secondary phase in the films, as well as the presence of SnSe at the back absorber region of the films processed with lower Zn-excess values and annealing temperatures. The ZnSe phase is found to accumulate more towards the surface of the absorber in samples with lower Zn-excess and lower temperature annealing, while increasing Zn-excess and annealing temperature promote its aggregation towards the back absorber region of the devices. These measurements indicate a strong dependence of these process variables in secondary phase formation and accumulation. In a preliminary optimization of both the composition and reactive annealing process, a solar cell with 4.8% efficiency has been fabricated, and potential mechanisms limiting device efficiency in these devices are discussed.
KW - CZTSe
KW - Raman spectroscopy
KW - Zn-excess
KW - secondary phases
KW - tin selenide
KW - zinc selenide
UR - http://www.scopus.com/inward/record.url?scp=84895930403&partnerID=8YFLogxK
U2 - 10.1002/pip.2473
DO - 10.1002/pip.2473
M3 - Artículo
SN - 1062-7995
VL - 22
SP - 479
EP - 487
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
IS - 4
ER -