Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

L. A. Santana, L. M. Reséndiz, A. I. Díaz, F. J. Hernandez-Cuevas, M. Aleman, N. Hernandez-Como

Research output: Contribution to journalArticle

Abstract

In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type semiconductor. The devices were fabricated with four photolithography steps on glass substrates. The materials used for the fabrication were: 150 nm thick Indium tin oxide (ITO) as the cathode, a 45 nm thick IGZO layer deposited by sputtering, a 500 nm thick SU-8 layer as passivation layer, a 40 nm thick AgOx layer deposited by reactive sputtering and a 70 nm thick Au capping layer deposited by e-beam evaporation as the anode. The fabricated Schottky barrier diodes area was 80um x 160um. From the current-voltage characteristics, based on thermionic emission theory, the following electrical parameters were obtained: an ideality factor of 1.71 ± 0.14, a rectification ratio of 1.38 × 109, a Schottky barrier height of 1.14 ± 0.01 eV, and a saturation current density of 4.5 × 10−13 A/cm2.

Original languageEnglish
Article number111182
JournalMicroelectronic Engineering
Volume220
DOIs
StatePublished - 15 Feb 2020

Fingerprint

Schottky barrier diodes
Schottky diodes
Indium
Oxides
metal oxides
Metals
Silver oxides
Zinc Oxide
Thermionic emission
Gallium
Reactive sputtering
Photolithography
Current voltage characteristics
Zinc oxide
Tin oxides
Passivation
Sputtering
Anodes
Evaporation
Cathodes

Keywords

  • IGZO
  • Schottky barrier diode
  • Silver oxide

Cite this

Santana, L. A. ; Reséndiz, L. M. ; Díaz, A. I. ; Hernandez-Cuevas, F. J. ; Aleman, M. ; Hernandez-Como, N. / Schottky barrier diodes fabricated with metal oxides AgOx/IGZO. In: Microelectronic Engineering. 2020 ; Vol. 220.
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Schottky barrier diodes fabricated with metal oxides AgOx/IGZO. / Santana, L. A.; Reséndiz, L. M.; Díaz, A. I.; Hernandez-Cuevas, F. J.; Aleman, M.; Hernandez-Como, N.

In: Microelectronic Engineering, Vol. 220, 111182, 15.02.2020.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

AU - Santana, L. A.

AU - Reséndiz, L. M.

AU - Díaz, A. I.

AU - Hernandez-Cuevas, F. J.

AU - Aleman, M.

AU - Hernandez-Como, N.

PY - 2020/2/15

Y1 - 2020/2/15

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AB - In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type semiconductor. The devices were fabricated with four photolithography steps on glass substrates. The materials used for the fabrication were: 150 nm thick Indium tin oxide (ITO) as the cathode, a 45 nm thick IGZO layer deposited by sputtering, a 500 nm thick SU-8 layer as passivation layer, a 40 nm thick AgOx layer deposited by reactive sputtering and a 70 nm thick Au capping layer deposited by e-beam evaporation as the anode. The fabricated Schottky barrier diodes area was 80um x 160um. From the current-voltage characteristics, based on thermionic emission theory, the following electrical parameters were obtained: an ideality factor of 1.71 ± 0.14, a rectification ratio of 1.38 × 109, a Schottky barrier height of 1.14 ± 0.01 eV, and a saturation current density of 4.5 × 10−13 A/cm2.

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