Ruthenium-iridium oxide films prepared by MOCVD and their electrocatalytic activity for oxygen evolution

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Abstract

Ruthenium-iridium oxide films were prepared in an horizontal hot-wall MOCVD apparatus and their electrocatalytic activity was investigated in the oxygen evolution reaction. Metalacetylacetonates were used as precursors and oxygen as the reactant gas. Appropriate deposition conditions for obtaining bi-metallic oxide films were found to be deposition temperature (T dep), 673 K and total pressure (Ptot), 133.32 Pa. X-Ray diffraction (XRD), Rietveld refinement and scanning electron microscopy (SEM) results demonstrated that the MOCVD method is a viable alternative to grow RuxIr1-xO2 films consisted of a single-phase with a very homogeneous distribution of elements. The electrocatalytic activity of the RuxIr1-xO2 films was investigated by cyclic voltammetry and anodic polarization curves in a 0.5 M H 2SO4 solution at room temperature. The single-phase Ru0.4Ir0.6O2 films showed to be very promising for the oxygen evolution reaction due to a synergistic effect.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume885
StatePublished - 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

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