TY - GEN
T1 - Responsivity determination of a hydrogenated amorphous silicon micro-bolometer array
AU - Orduña-Díaz, A.
AU - Rojas-López, M.
AU - Delgado-Macuil, R.
AU - Torres-Jácome, Alfonso
AU - De La Hidalga-Wade, F. J.
AU - Ferrusca, Daniel
AU - Ventura-Gonzalez, Salvador
AU - Treviño-Palacios, C. G.
PY - 2011
Y1 - 2011
N2 - We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride (Si 3N 4) layer. Wet bulk micromachining was used to create pixels of suspended nitride film by removing the silicon underneath. On this film, a boron doped a-Si:H layer was deposited using a low frequency PECVD system at 540 K. Conventional lithography was used to define the bolometers on the nitride windows, and the 5 × 5 microbolometer array was fabricated and characterized at 77 K. A 1.17 x 10 -2 mA/W responsivity, with a temperature coefficient of resistance (TCR) of 4.25%, were obtained.
AB - We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride (Si 3N 4) layer. Wet bulk micromachining was used to create pixels of suspended nitride film by removing the silicon underneath. On this film, a boron doped a-Si:H layer was deposited using a low frequency PECVD system at 540 K. Conventional lithography was used to define the bolometers on the nitride windows, and the 5 × 5 microbolometer array was fabricated and characterized at 77 K. A 1.17 x 10 -2 mA/W responsivity, with a temperature coefficient of resistance (TCR) of 4.25%, were obtained.
KW - Hydrogenated amorphous silicon
KW - microbolometers
KW - thermosensor
UR - http://www.scopus.com/inward/record.url?scp=84858382254&partnerID=8YFLogxK
U2 - 10.1117/12.903349
DO - 10.1117/12.903349
M3 - Contribución a la conferencia
AN - SCOPUS:84858382254
SN - 9780819485854
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - 22nd Congress of the International Commission for Optics
T2 - 22nd Congress of the International Commission for Optics: Light for the Development of the World
Y2 - 15 August 2011 through 19 August 2011
ER -