RAMAN STUDIES OF THE P LOCAL MODE VIBRATION IN P IMPLANTED, LASER ANNEALED Ge.

G. Contreras, A. Compaan, A. Axmann

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Abstract

The authors report the observation by Raman scattering by the localized vibrational mode of P in P implanted and pulsed laser annealed Ge. The heavy dose ion implantation followed by pulsed laser annealing have allowed achieving P densities exceeding the normal solid solubility limits in Ge, a fact which is essential for the local mode observations. Information about the position and intensity of the P local mode as a function of the implantations dose and its resonant Raman behavior as a function of laser photon energy has been obtained.
Original languageAmerican English
Pages193-195
Number of pages173
StatePublished - 1 Oct 1983
Externally publishedYes
EventJournal de Physique (Paris), Colloque -
Duration: 1 Oct 1983 → …

Conference

ConferenceJournal de Physique (Paris), Colloque
Period1/10/83 → …

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Cite this

Contreras, G., Compaan, A., & Axmann, A. (1983). RAMAN STUDIES OF THE P LOCAL MODE VIBRATION IN P IMPLANTED, LASER ANNEALED Ge.. 193-195. Paper presented at Journal de Physique (Paris), Colloque, .