TY - GEN
T1 - RAMAN STUDIES OF THE P LOCAL MODE VIBRATION IN P IMPLANTED, LASER ANNEALED Ge.
AU - Contreras, G.
AU - Compaan, A.
AU - Axmann, A.
PY - 1983
Y1 - 1983
N2 - The authors report the observation by Raman scattering by the localized vibrational mode of P in P implanted and pulsed laser annealed Ge. The heavy dose ion implantation followed by pulsed laser annealing have allowed achieving P densities exceeding the normal solid solubility limits in Ge, a fact which is essential for the local mode observations. Information about the position and intensity of the P local mode as a function of the implantations dose and its resonant Raman behavior as a function of laser photon energy has been obtained.
AB - The authors report the observation by Raman scattering by the localized vibrational mode of P in P implanted and pulsed laser annealed Ge. The heavy dose ion implantation followed by pulsed laser annealing have allowed achieving P densities exceeding the normal solid solubility limits in Ge, a fact which is essential for the local mode observations. Information about the position and intensity of the P local mode as a function of the implantations dose and its resonant Raman behavior as a function of laser photon energy has been obtained.
UR - http://www.scopus.com/inward/record.url?scp=0020831110&partnerID=8YFLogxK
U2 - 10.1051/jphyscol:1983530
DO - 10.1051/jphyscol:1983530
M3 - Contribución a la conferencia
AN - SCOPUS:0020831110
SN - 2902731620
SN - 9782902731626
T3 - Journal de Physique (Paris), Colloque
SP - 193
EP - 195
BT - Journal de Physique (Paris), Colloque
ER -