The authors report the observation by Raman scattering by the localized vibrational mode of P in P implanted and pulsed laser annealed Ge. The heavy dose ion implantation followed by pulsed laser annealing have allowed achieving P densities exceeding the normal solid solubility limits in Ge, a fact which is essential for the local mode observations. Information about the position and intensity of the P local mode as a function of the implantations dose and its resonant Raman behavior as a function of laser photon energy has been obtained.
|Original language||American English|
|Number of pages||173|
|State||Published - 1 Oct 1983|
|Event||Journal de Physique (Paris), Colloque - |
Duration: 1 Oct 1983 → …
|Conference||Journal de Physique (Paris), Colloque|
|Period||1/10/83 → …|