Raman scattering studies of Te doped In0.14Ga 0.86As0.13Sb0.87 alloys grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes; E. López-Cruz; J. G. Mendoza-Álvarez; S. Jiḿnez-Sandoval

doi:10.1063/1.2400807

Raman scattering studies of Te doped In_0.14Ga _0.86As_0.13Sb_0.87 alloys grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes, E. López-Cruz, J. G. Mendoza-Álvarez, S. Jiḿnez-Sandoval

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

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Abstract

Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14 Ga0.86 As0.13 Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb. Layers doped with Te were accomplished by incorporating Sb2 Te3 pellets into the growth melt in the range from 6.48× 10-6 M to 4.31× 10-4 M. Using Raman spectroscopy we characterized the structural quality. Two main bands are observed in the Raman spectra centered at 230 and 245 cm-1 which depend strongly on the molar concentration of Sb2 Te3. The assignation of the observed vibrational modes to GaAs-like and to (GaSb+InAs) -like mixture modes is discussed using the random-element isodisplacement (REI) model. The REI model seems to describe the observed behavior of vibrational modes reasonably.

Original language	English
Article number	123503
Journal	Journal of Applied Physics
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.2400807
State	Published - 2006

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@article{fa96741ba24a47fc884bfad7ef97457d,

title = "Raman scattering studies of Te doped In0.14Ga 0.86As0.13Sb0.87 alloys grown on GaSb by liquid phase epitaxy",

abstract = "Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14 Ga0.86 As0.13 Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb. Layers doped with Te were accomplished by incorporating Sb2 Te3 pellets into the growth melt in the range from 6.48× 10-6 M to 4.31× 10-4 M. Using Raman spectroscopy we characterized the structural quality. Two main bands are observed in the Raman spectra centered at 230 and 245 cm-1 which depend strongly on the molar concentration of Sb2 Te3. The assignation of the observed vibrational modes to GaAs-like and to (GaSb+InAs) -like mixture modes is discussed using the random-element isodisplacement (REI) model. The REI model seems to describe the observed behavior of vibrational modes reasonably.",

author = "J. D{\'i}az-Reyes and E. L{\'o}pez-Cruz and Mendoza-{\'A}lvarez, {J. G.} and S. Jiḿnez-Sandoval",

note = "Funding Information: The authors want to thank M. S. P. Rodr{\'i}guez for help in the growth process of the epilayers. This work was supported by the CONACYT/Mexico grants (No. 42228-F).",

year = "2006",

doi = "10.1063/1.2400807",

language = "Ingl{\'e}s",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "12",

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TY - JOUR

T1 - Raman scattering studies of Te doped In0.14Ga 0.86As0.13Sb0.87 alloys grown on GaSb by liquid phase epitaxy

AU - Díaz-Reyes, J.

AU - López-Cruz, E.

AU - Mendoza-Álvarez, J. G.

AU - Jiḿnez-Sandoval, S.

N1 - Funding Information: The authors want to thank M. S. P. Rodríguez for help in the growth process of the epilayers. This work was supported by the CONACYT/Mexico grants (No. 42228-F).

PY - 2006

Y1 - 2006

N2 - Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14 Ga0.86 As0.13 Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb. Layers doped with Te were accomplished by incorporating Sb2 Te3 pellets into the growth melt in the range from 6.48× 10-6 M to 4.31× 10-4 M. Using Raman spectroscopy we characterized the structural quality. Two main bands are observed in the Raman spectra centered at 230 and 245 cm-1 which depend strongly on the molar concentration of Sb2 Te3. The assignation of the observed vibrational modes to GaAs-like and to (GaSb+InAs) -like mixture modes is discussed using the random-element isodisplacement (REI) model. The REI model seems to describe the observed behavior of vibrational modes reasonably.

AB - Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14 Ga0.86 As0.13 Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb. Layers doped with Te were accomplished by incorporating Sb2 Te3 pellets into the growth melt in the range from 6.48× 10-6 M to 4.31× 10-4 M. Using Raman spectroscopy we characterized the structural quality. Two main bands are observed in the Raman spectra centered at 230 and 245 cm-1 which depend strongly on the molar concentration of Sb2 Te3. The assignation of the observed vibrational modes to GaAs-like and to (GaSb+InAs) -like mixture modes is discussed using the random-element isodisplacement (REI) model. The REI model seems to describe the observed behavior of vibrational modes reasonably.

UR - http://www.scopus.com/inward/record.url?scp=33846071057&partnerID=8YFLogxK

U2 - 10.1063/1.2400807

DO - 10.1063/1.2400807

M3 - Artículo

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123503

ER -

Raman scattering studies of Te doped In_0.14Ga _0.86As_0.13Sb_0.87 alloys grown on GaSb by liquid phase epitaxy

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