TY - GEN
T1 - Raman measurements on GaN thin films for PV - Purposes
AU - Contreras-Puente, G.
AU - Cantarero, A.
AU - Recio, J. M.
AU - De Melo, O.
AU - Hernández-Cruz, E.
AU - De Moure Flores, F.
AU - Mendoza-Pérez, R.
AU - Santana-Rodríguez, G.
AU - Aguilar-Hernández, J.
AU - López-López, M.
AU - Zamora, L.
AU - Escamilla-Esquivel, A.
PY - 2012
Y1 - 2012
N2 - Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman modes of A1, E1, and E2 symmetries. In this work we present and discussed our Raman experiments where particularly the detection of the E2 and A1 modes are illustrated in these nitride semiconductor compounds.
AB - Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman modes of A1, E1, and E2 symmetries. In this work we present and discussed our Raman experiments where particularly the detection of the E2 and A1 modes are illustrated in these nitride semiconductor compounds.
KW - Raman scattering
KW - crystal microstructure
KW - material properties
KW - physical optics
KW - semiconductor films
KW - strain measurements
UR - http://www.scopus.com/inward/record.url?scp=84869406707&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2012.6317563
DO - 10.1109/PVSC.2012.6317563
M3 - Contribución a la conferencia
AN - SCOPUS:84869406707
SN - 9781467300643
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 36
EP - 38
BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Y2 - 3 June 2012 through 8 June 2012
ER -
