TY - GEN
T1 - Raman and FTIR spectroscopy of GaSb and AlxGa1-X alloys with nanometric thickness grown at low temperatures by liquid phase epitaxy
AU - Prieto-Cortés, P.
AU - Palafox-Plata, M.
AU - Gayou, V. L.
AU - Delgado-Macuil, R.
AU - Rodríguez, A. G.
AU - Salazar-Hernández, B.
AU - Rojas-López, M.
PY - 2008
Y1 - 2008
N2 - GaSb and AlxGa1-xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower than 400 °C. The layers were grown from 400 to 250 °C for the ternary layers, and at 200°C for the binary layers using a supercooling process of 10 °C and a cooling rate of 0.5 °C/min. In addition to that, ternary AlxGa1-xSb layers were prepared at 250 °C for several contact times 1, 5, 10, 40 and 80 minutes, and something similar was done for binary GaSb layers, with contact times of 7.5, 15, 30, 60 and 120 minutes. Infrared reflectance results show the presence of single mode spectra for GaSb layers and two mode spectra for Al xGa1-xSb layers corroborating the growth of the alloys, whereas Raman scattering results show also the single and two mode behaviors of the GaSb and AlxGa1-xSb layers respectively. In ternary layers Raman bands, such as LO-GaSb like mode undergo a shift to low energies with growth temperature and with contact time. The results suggest a greater incorporation of Al atoms in the layer for smaller contact times that with greater contact times, and also for high temperatures that with low temperatures.
AB - GaSb and AlxGa1-xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower than 400 °C. The layers were grown from 400 to 250 °C for the ternary layers, and at 200°C for the binary layers using a supercooling process of 10 °C and a cooling rate of 0.5 °C/min. In addition to that, ternary AlxGa1-xSb layers were prepared at 250 °C for several contact times 1, 5, 10, 40 and 80 minutes, and something similar was done for binary GaSb layers, with contact times of 7.5, 15, 30, 60 and 120 minutes. Infrared reflectance results show the presence of single mode spectra for GaSb layers and two mode spectra for Al xGa1-xSb layers corroborating the growth of the alloys, whereas Raman scattering results show also the single and two mode behaviors of the GaSb and AlxGa1-xSb layers respectively. In ternary layers Raman bands, such as LO-GaSb like mode undergo a shift to low energies with growth temperature and with contact time. The results suggest a greater incorporation of Al atoms in the layer for smaller contact times that with greater contact times, and also for high temperatures that with low temperatures.
UR - http://www.scopus.com/inward/record.url?scp=43649106920&partnerID=8YFLogxK
U2 - 10.1063/1.2926830
DO - 10.1063/1.2926830
M3 - Contribución a la conferencia
AN - SCOPUS:43649106920
SN - 9780735405110
T3 - AIP Conference Proceedings
SP - 1258
EP - 1261
BT - RIAO/OPTILAS 2007 - 6th Ibero-American Conference on Optics (RIAO) and the 9th Latin-American Meeting on Optics, Lasers and Applications (OPTILAS)
T2 - 6th Ibero-American Conference onOptics and 9th Latin-American Meeting on Optics, Lasers and Applications, RIAO/OPTILAS 2007
Y2 - 21 October 2007 through 26 October 2007
ER -