Preparation of nanostructured Al<inf>2</inf>O<inf>3</inf>-TiO<inf>2</inf> composite films by MOCVD

J. A.Galaviz Pérez, J. A.Montes de Oca Valero, J. R.Vargas García, H. J.Dorantes Rosales

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Abstract

Nanostructured Al2O3-TiO2 composite films were prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD) using aluminum acetylacetonate and titanium tetraisopropoxide precursors. Oxygen and argon were used as the reactive and carrier gases, respectively. Deposition temperature (Tdep) was varied from 723 to 873 K and total pressure was kept constant at 133-266 Pa. The formation of composite films was achieved by mixing the precursor vapors, which were obtained by heating the aluminum and titanium precursors at 403 and 323-353 K, respectively. The films were characterized by XRD, SEM, EPMA and TEM. The crystalline structure and the surface morphology of the nanostructured Al2O3-TiO2 composite films were strongly dependent on the precursor and deposition temperatures. © 2009 Elsevier B.V. All rights reserved.
Original languageAmerican English
Pages (from-to)617-619
Number of pages555
JournalJournal of Alloys and Compounds
DOIs
StatePublished - 16 Apr 2010

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