TY - JOUR
T1 - Point defect chemistry of donor-doped bismuth titanate ceramic
AU - Ambriz-Vargas, Fabian
AU - Crespo-Villegas, Josefina
AU - Zamorano-Ulloa, Rafael
AU - Cabrera-Sierra, Roman
AU - Gómez-Yáñez, Carlos
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/2/15
Y1 - 2019/2/15
N2 - This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi 4 Ti 3 O 12 ), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi 4 Ti 3 O 12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi 4 Ti 3 O 12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (VO∙∙). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges (h ∙ ) and oxygen vacancies (VO∙∙).
AB - This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi 4 Ti 3 O 12 ), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi 4 Ti 3 O 12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi 4 Ti 3 O 12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (VO∙∙). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges (h ∙ ) and oxygen vacancies (VO∙∙).
UR - http://www.scopus.com/inward/record.url?scp=85058407968&partnerID=8YFLogxK
U2 - 10.1007/s10854-018-0552-5
DO - 10.1007/s10854-018-0552-5
M3 - Artículo
SN - 0957-4522
VL - 30
SP - 2763
EP - 2771
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -