Point defect chemistry of donor-doped bismuth titanate ceramic

Fabian Ambriz-Vargas, Josefina Crespo-Villegas, Rafael Zamorano-Ulloa, Roman Cabrera-Sierra, Carlos Gómez-Yáñez

Research output: Contribution to journalArticle

Abstract

© 2018, Springer Science+Business Media, LLC, part of Springer Nature. This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi 4 Ti 3 O 12 ), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi 4 Ti 3 O 12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi 4 Ti 3 O 12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (VO∙∙). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges (h ∙ ) and oxygen vacancies (VO∙∙).
Original languageAmerican English
Pages (from-to)2763-2771
Number of pages2485
JournalJournal of Materials Science: Materials in Electronics
DOIs
StatePublished - 15 Feb 2019

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Bismuth
Point defects
Barium
point defects
bismuth
barium
ceramics
chemistry
Oxygen vacancies
Electron spin resonance spectroscopy
Rietveld refinement
oxygen
Electric properties
Crystal structure
solid phases
electron paramagnetic resonance
X ray diffraction
Defects
communication
electrical properties

Cite this

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abstract = "{\circledC} 2018, Springer Science+Business Media, LLC, part of Springer Nature. This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi 4 Ti 3 O 12 ), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi 4 Ti 3 O 12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi 4 Ti 3 O 12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (VO∙∙). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges (h ∙ ) and oxygen vacancies (VO∙∙).",
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Point defect chemistry of donor-doped bismuth titanate ceramic. / Ambriz-Vargas, Fabian; Crespo-Villegas, Josefina; Zamorano-Ulloa, Rafael; Cabrera-Sierra, Roman; Gómez-Yáñez, Carlos.

In: Journal of Materials Science: Materials in Electronics, 15.02.2019, p. 2763-2771.

Research output: Contribution to journalArticle

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