Photothermal characterization of electrochemical etching processed n-type porous silicon

A. Calderón, J. J. Alvarado-Gil, Yu Gurevich, A. Cruz-Orea, I. Delgadillo, H. Vargas, L. C.M. Miranda

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Abstract

The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material. © 1997 The American Physical Society.
Original languageAmerican English
Pages (from-to)5022-5025
Number of pages4519
JournalPhysical Review Letters
DOIs
StatePublished - 1 Jan 1997
Externally publishedYes

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Calderón, A., Alvarado-Gil, J. J., Gurevich, Y., Cruz-Orea, A., Delgadillo, I., Vargas, H., & Miranda, L. C. M. (1997). Photothermal characterization of electrochemical etching processed n-type porous silicon. Physical Review Letters, 5022-5025. https://doi.org/10.1103/PhysRevLett.79.5022