The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material. © 1997 The American Physical Society.
Calderón, A., Alvarado-Gil, J. J., Gurevich, Y., Cruz-Orea, A., Delgadillo, I., Vargas, H., & Miranda, L. C. M. (1997). Photothermal characterization of electrochemical etching processed n-type porous silicon. Physical Review Letters, 5022-5025. https://doi.org/10.1103/PhysRevLett.79.5022