Photothermal characterization of electrochemical etching processed n-type porous silicon

A. Calderón; J. J. Alvarado-Gil; Yu Gurevich; A. Cruz-Orea; I. Delgadillo; H. Vargas; L. C.M. Miranda

doi:10.1103/PhysRevLett.79.5022

Photothermal characterization of electrochemical etching processed n-type porous silicon

A. Calderón, J. J. Alvarado-Gil, Yu Gurevich, A. Cruz-Orea, I. Delgadillo, H. Vargas, L. C.M. Miranda

Research output: Contribution to journal › Article › peer-review

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Abstract

The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO₂ in the composition of porous silicon material.

Original language	English
Pages (from-to)	5022-5025
Number of pages	4
Journal	Physical Review Letters
Volume	79
Issue number	25
DOIs	https://doi.org/10.1103/PhysRevLett.79.5022
State	Published - 1 Jan 1997
Externally published	Yes

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10.1103/PhysRevLett.79.5022

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title = "Photothermal characterization of electrochemical etching processed n-type porous silicon",

abstract = "The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.",

author = "A. Calder{\'o}n and Alvarado-Gil, {J. J.} and Yu Gurevich and A. Cruz-Orea and I. Delgadillo and H. Vargas and Miranda, {L. C.M.}",

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AU - Alvarado-Gil, J. J.

AU - Gurevich, Yu

AU - Cruz-Orea, A.

AU - Delgadillo, I.

AU - Vargas, H.

AU - Miranda, L. C.M.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.

AB - The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.

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EP - 5025

JO - Physical Review Letters

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Photothermal characterization of electrochemical etching processed n-type porous silicon

Abstract

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