Abstract
The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.
Original language | English |
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Pages (from-to) | 5022-5025 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 79 |
Issue number | 25 |
DOIs | |
State | Published - 1 Jan 1997 |
Externally published | Yes |