TY - JOUR
T1 - Photoreflectance study of GaMnAs layers grown by MBE
AU - Martínez-Velis, I.
AU - Contreras-Guerrero, R.
AU - Rojas-Ramírez, J. S.
AU - Ramírez-López, M.
AU - Gallardo-Hernández, S.
AU - Kudriatsev, Y.
AU - Vázquez-López, C.
AU - Jiménez-Sandoval, S.
AU - Rangel-Kuoppa, V. T.
AU - López-López, M.
N1 - Funding Information:
This work was partially supported by CONACyT and ICyTDF-Mexico. We thank Professor C. Trallero-Giner for his useful discussions on Raman spectroscopy and Professor Wolfgang Jantsch for his scientific support and advice on transport studies. V.-T Rangel-Kuoppa gratefully acknowledges support by the Fonds zur Förderung der Wissenschaftlichen Forschung, Vienna, Austria with project 20550 , and CONACyT for postdoctoral fellowship 78965. We also thank F. Rodriguez, R. Fragoso, A. Guillen, E. Pachinger, B. Wegschaider, A. Halilovic, U. Kainz, E. Nusko, O. Fuchs, and S. Bräuer for their technical assistance.
PY - 2011/5/15
Y1 - 2011/5/15
N2 - GaMnAs layers were grown by MBE on GaAs (0 0 1) substrates. The structural properties of the epilayers were studied by atomic force microscopy, secondary ion mass spectroscopy, high-resolution X-ray diffraction, and Raman spectroscopy. Photoreflectance spectra at room temperature exhibited FranzKeldysh oscillations; from an analysis of these oscillations we obtained the built-in internal electric field and the bandgap energy of the GaMnAs epilayers. We studied the variation of these parameters as a function of Mn in the epilayers. In addition the holes concentration in the samples was extracted from the bandgap narrowing value and compared with the carrier density obtained by the Hall measurements.
AB - GaMnAs layers were grown by MBE on GaAs (0 0 1) substrates. The structural properties of the epilayers were studied by atomic force microscopy, secondary ion mass spectroscopy, high-resolution X-ray diffraction, and Raman spectroscopy. Photoreflectance spectra at room temperature exhibited FranzKeldysh oscillations; from an analysis of these oscillations we obtained the built-in internal electric field and the bandgap energy of the GaMnAs epilayers. We studied the variation of these parameters as a function of Mn in the epilayers. In addition the holes concentration in the samples was extracted from the bandgap narrowing value and compared with the carrier density obtained by the Hall measurements.
KW - Atomic force microscopy
KW - Characterization
KW - Magneto-optic materials
KW - Molecular beam epitaxy
KW - Semiconducting gallium arsenide
UR - http://www.scopus.com/inward/record.url?scp=79957978275&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.12.041
DO - 10.1016/j.jcrysgro.2010.12.041
M3 - Artículo
SN - 0022-0248
VL - 323
SP - 344
EP - 347
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -