Abstract
The photoluminescence (PL) and its temperature dependence have been studied in MBE grown InAs quantum dots (QDs) embedded in GaAs/Al0.3Ga0.7As/In0.15Ga0. 85As/AlxGa1-xAs/ GaAs quantum wells (QWs) in dependence on the composition of the capping AlxGa1-xAs layers and after the thermal annealing at 640°C during 2 hours. Two types of capping layers (GaAs and Al0.3Ga0.7As) were investigated.It is shown that annealing initiates the shift of PL peak positions into the high energy spectral range and the value of this shift depends on the composition of capping layers. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10-300K and are compared with the temperature shrinkage of the band gap in the bulk InAs crystal. This permits to investigate the efficiency of the Ga(Al)/In inter diffusion processes in dependence on the capping layer compositions andthermal annealing. Experimental and fitting parameters obtained for the InAs QDs have been compared with known one for the bulk InAs crystal. It is revealed that the efficiency of the Ga(Al)/In inter diffusion depends essentially on the capping layer compositions.
| Original language | English |
|---|---|
| Pages (from-to) | A81-A86 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1534 |
| DOIs | |
| State | Published - 2013 |
| Event | 21st International Materials Research Congress, IMRC 2012 - Cancun, Mexico Duration: 12 Aug 2012 → 17 Aug 2012 |
Keywords
- annealing
- nanostructure
- self-assembly