TY - JOUR
T1 - Photoluminescence spectrum dependences on temperature and excitation power in InAs quantum dots embedded in InGaAs/GaAs quantum wells
AU - Hernandez, Alejandro Vivas
AU - Lozada, Erick Velázquez
AU - Guerrero Moreno, Ingri J.
PY - 2013
Y1 - 2013
N2 - The photoluminescence (PL), its temperature and excitation power dependences have been studied in the symmetric In0.15Ga1-0.15As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), obtained with the variation of the QD growth temperature (470-535°C). The increase of QD growth temperatures is accompanied by the enlargement of the QD lateral sizes (from 12 up to 28 nm) and by the shift non monotonously of the PL peak positions. The fitting procedure has been applied for the analysis of the temperature dependences of PL peaks. The obtained fitting parameters testify that in studied QD structures the process of In/Ga inter diffusion between QDs and capping/buffer layers takes place. The intensity of the In/Ga inter diffusion depends on the density and the size of QDs in studied QD structures. Additionally the In/Ga intermixing influent essentially on the dependence of the integrated PL intensity versus excitation power.
AB - The photoluminescence (PL), its temperature and excitation power dependences have been studied in the symmetric In0.15Ga1-0.15As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), obtained with the variation of the QD growth temperature (470-535°C). The increase of QD growth temperatures is accompanied by the enlargement of the QD lateral sizes (from 12 up to 28 nm) and by the shift non monotonously of the PL peak positions. The fitting procedure has been applied for the analysis of the temperature dependences of PL peaks. The obtained fitting parameters testify that in studied QD structures the process of In/Ga inter diffusion between QDs and capping/buffer layers takes place. The intensity of the In/Ga inter diffusion depends on the density and the size of QDs in studied QD structures. Additionally the In/Ga intermixing influent essentially on the dependence of the integrated PL intensity versus excitation power.
KW - diffusion
KW - luminescence
KW - self-assembly
UR - http://www.scopus.com/inward/record.url?scp=84899565346&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.301
DO - 10.1557/opl.2013.301
M3 - Artículo de la conferencia
AN - SCOPUS:84899565346
SN - 0272-9172
VL - 1534
SP - A69-A74
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - 21st International Materials Research Congress, IMRC 2012
Y2 - 12 August 2012 through 17 August 2012
ER -