Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices

G. Santana, A. Mejia-Montero, B. M. Monroy, M. Lopez-Lopez, Y. L. Casallas-Moreno, M. Ramirez-Lopez, G. Contreras-Puente, O. De Melo

Research output: Contribution to conferencePaperResearch

3 Citations (Scopus)

Abstract

© 2014 IEEE. The use of III-V and semiconductor nitrides in solar cells has been of interest in the PV-community due to the wide variation range of the band gap in these materials. Particularly, the processing of hetero-junction structures of AlGaN/GaN and Si(p)/GaN(n) has been of great interest recently. In this work, the quality of GaN and InGaN thin films grown by Molecular Beam Epitaxy (MBE) on different substrate and buffer layers has been studied by photoluminescence spectroscopy (PL). The PL measurements were processed as function of sample temperature. In the PL spectra it is possible to observe a strong near band-gap-edge emission and a broad blue, green and yellow luminescence (BL, GL, YL), which can be assigned to the presence of Ga and N vacancies, amorphous phases, deep level impurities and structural defects. The relative intensity between the different peaks of the bands related to defects or impurities were studied as a tool for quality control of the films.
Original languageAmerican English
Pages1852-1854
Number of pages1666
DOIs
StatePublished - 1 Jan 2014
Event2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 -
Duration: 1 Jan 2014 → …

Conference

Conference2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Period1/01/14 → …

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Photoluminescence spectroscopy
quality control
Quality control
Solar cells
spectroscopy
Thin films
defect
Energy gap
Impurities
Defects
Buffer layers
luminescence
Molecular beam epitaxy
Nitrides
Vacancies
Luminescence
Semiconductor materials
substrate
Substrates
Processing

Cite this

Santana, G., Mejia-Montero, A., Monroy, B. M., Lopez-Lopez, M., Casallas-Moreno, Y. L., Ramirez-Lopez, M., ... De Melo, O. (2014). Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices. 1852-1854. Paper presented at 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, . https://doi.org/10.1109/PVSC.2014.6925284
Santana, G. ; Mejia-Montero, A. ; Monroy, B. M. ; Lopez-Lopez, M. ; Casallas-Moreno, Y. L. ; Ramirez-Lopez, M. ; Contreras-Puente, G. ; De Melo, O. / Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices. Paper presented at 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, .1666 p.
@conference{de6a4df5ebba4a349920a73c8531b265,
title = "Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices",
abstract = "{\circledC} 2014 IEEE. The use of III-V and semiconductor nitrides in solar cells has been of interest in the PV-community due to the wide variation range of the band gap in these materials. Particularly, the processing of hetero-junction structures of AlGaN/GaN and Si(p)/GaN(n) has been of great interest recently. In this work, the quality of GaN and InGaN thin films grown by Molecular Beam Epitaxy (MBE) on different substrate and buffer layers has been studied by photoluminescence spectroscopy (PL). The PL measurements were processed as function of sample temperature. In the PL spectra it is possible to observe a strong near band-gap-edge emission and a broad blue, green and yellow luminescence (BL, GL, YL), which can be assigned to the presence of Ga and N vacancies, amorphous phases, deep level impurities and structural defects. The relative intensity between the different peaks of the bands related to defects or impurities were studied as a tool for quality control of the films.",
author = "G. Santana and A. Mejia-Montero and Monroy, {B. M.} and M. Lopez-Lopez and Casallas-Moreno, {Y. L.} and M. Ramirez-Lopez and G. Contreras-Puente and {De Melo}, O.",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/PVSC.2014.6925284",
language = "American English",
pages = "1852--1854",
note = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 01-01-2014",

}

Santana, G, Mejia-Montero, A, Monroy, BM, Lopez-Lopez, M, Casallas-Moreno, YL, Ramirez-Lopez, M, Contreras-Puente, G & De Melo, O 2014, 'Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices' Paper presented at 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, 1/01/14, pp. 1852-1854. https://doi.org/10.1109/PVSC.2014.6925284

Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices. / Santana, G.; Mejia-Montero, A.; Monroy, B. M.; Lopez-Lopez, M.; Casallas-Moreno, Y. L.; Ramirez-Lopez, M.; Contreras-Puente, G.; De Melo, O.

2014. 1852-1854 Paper presented at 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices

AU - Santana, G.

AU - Mejia-Montero, A.

AU - Monroy, B. M.

AU - Lopez-Lopez, M.

AU - Casallas-Moreno, Y. L.

AU - Ramirez-Lopez, M.

AU - Contreras-Puente, G.

AU - De Melo, O.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - © 2014 IEEE. The use of III-V and semiconductor nitrides in solar cells has been of interest in the PV-community due to the wide variation range of the band gap in these materials. Particularly, the processing of hetero-junction structures of AlGaN/GaN and Si(p)/GaN(n) has been of great interest recently. In this work, the quality of GaN and InGaN thin films grown by Molecular Beam Epitaxy (MBE) on different substrate and buffer layers has been studied by photoluminescence spectroscopy (PL). The PL measurements were processed as function of sample temperature. In the PL spectra it is possible to observe a strong near band-gap-edge emission and a broad blue, green and yellow luminescence (BL, GL, YL), which can be assigned to the presence of Ga and N vacancies, amorphous phases, deep level impurities and structural defects. The relative intensity between the different peaks of the bands related to defects or impurities were studied as a tool for quality control of the films.

AB - © 2014 IEEE. The use of III-V and semiconductor nitrides in solar cells has been of interest in the PV-community due to the wide variation range of the band gap in these materials. Particularly, the processing of hetero-junction structures of AlGaN/GaN and Si(p)/GaN(n) has been of great interest recently. In this work, the quality of GaN and InGaN thin films grown by Molecular Beam Epitaxy (MBE) on different substrate and buffer layers has been studied by photoluminescence spectroscopy (PL). The PL measurements were processed as function of sample temperature. In the PL spectra it is possible to observe a strong near band-gap-edge emission and a broad blue, green and yellow luminescence (BL, GL, YL), which can be assigned to the presence of Ga and N vacancies, amorphous phases, deep level impurities and structural defects. The relative intensity between the different peaks of the bands related to defects or impurities were studied as a tool for quality control of the films.

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912094695&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84912094695&origin=inward

U2 - 10.1109/PVSC.2014.6925284

DO - 10.1109/PVSC.2014.6925284

M3 - Paper

SP - 1852

EP - 1854

ER -

Santana G, Mejia-Montero A, Monroy BM, Lopez-Lopez M, Casallas-Moreno YL, Ramirez-Lopez M et al. Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices. 2014. Paper presented at 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, . https://doi.org/10.1109/PVSC.2014.6925284