Photoluminescence of in<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>Sb <inf>1-y</inf> epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb

J. Díaz-Reyes, J. A. Cardona-Bedoya, J. Mendoza-Álvarez, S. Manrique-Moreno, M. Galván-Arellano, M. L. Herrera-Gómez, M. A. Ramírez-Cruz

Research output: Contribution to conferencePaper

Abstract

The influence of tellurium doping on the optical properties of In xGa1-xAsySb1-y epitaxial layers has been studied by photoluminescence (PL) spectroscopy. Layers were grown by liquid phase epitaxy on (100) GaSb substrates highly resistive under lattice-matching conditions. PL measurements were carried out by exciting the sample with the 488-nm line of an Ar-ion laser and varying the exciting power in the range between 40 and 200 mW. PL spectra were also measured at different temperatures in the range between 15 and 300 K. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centered at around 648.6 meV with a full width at half maximum (FWHM) of about 7 meV which is an evidence of the good crystalline quality of the epilayers and another dominant peak at 614 meV associated to band-to-acceptor. For higher Te-doping, the PL spectra showed the presence of band-to-band and donor-to-acceptor transitions which overlap as Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the energy peak of the PL spectra and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to the doping with Te in the epilayers, in the range 1016 to 1017 cm -3. ©2004 IEEE.
Original languageAmerican English
Pages247-252
Number of pages221
StatePublished - 1 Dec 2004
Externally publishedYes
Event2004 1st International Conference on Electrical and Electronics Engineering, ICEEE -
Duration: 1 Dec 2004 → …

Conference

Conference2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
Period1/12/04 → …

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Tellurium
Liquid phase epitaxy
Epitaxial layers
Photoluminescence
Doping (additives)
Epilayers
Photoluminescence spectroscopy
Full width at half maximum
Fermi level
Conduction bands
Excitons
Carrier concentration
Optical properties
Ions
Crystalline materials
Lasers
Substrates

Cite this

Díaz-Reyes, J., Cardona-Bedoya, J. A., Mendoza-Álvarez, J., Manrique-Moreno, S., Galván-Arellano, M., Herrera-Gómez, M. L., & Ramírez-Cruz, M. A. (2004). Photoluminescence of in<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>Sb <inf>1-y</inf> epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb. 247-252. Paper presented at 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE, .
Díaz-Reyes, J. ; Cardona-Bedoya, J. A. ; Mendoza-Álvarez, J. ; Manrique-Moreno, S. ; Galván-Arellano, M. ; Herrera-Gómez, M. L. ; Ramírez-Cruz, M. A. / Photoluminescence of in<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>Sb <inf>1-y</inf> epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb. Paper presented at 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE, .221 p.
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title = "Photoluminescence of inxGa1-xAsySb 1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb",
abstract = "The influence of tellurium doping on the optical properties of In xGa1-xAsySb1-y epitaxial layers has been studied by photoluminescence (PL) spectroscopy. Layers were grown by liquid phase epitaxy on (100) GaSb substrates highly resistive under lattice-matching conditions. PL measurements were carried out by exciting the sample with the 488-nm line of an Ar-ion laser and varying the exciting power in the range between 40 and 200 mW. PL spectra were also measured at different temperatures in the range between 15 and 300 K. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centered at around 648.6 meV with a full width at half maximum (FWHM) of about 7 meV which is an evidence of the good crystalline quality of the epilayers and another dominant peak at 614 meV associated to band-to-acceptor. For higher Te-doping, the PL spectra showed the presence of band-to-band and donor-to-acceptor transitions which overlap as Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the energy peak of the PL spectra and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to the doping with Te in the epilayers, in the range 1016 to 1017 cm -3. {\circledC}2004 IEEE.",
author = "J. D{\'i}az-Reyes and Cardona-Bedoya, {J. A.} and J. Mendoza-{\'A}lvarez and S. Manrique-Moreno and M. Galv{\'a}n-Arellano and Herrera-G{\'o}mez, {M. L.} and Ram{\'i}rez-Cruz, {M. A.}",
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Díaz-Reyes, J, Cardona-Bedoya, JA, Mendoza-Álvarez, J, Manrique-Moreno, S, Galván-Arellano, M, Herrera-Gómez, ML & Ramírez-Cruz, MA 2004, 'Photoluminescence of in<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>Sb <inf>1-y</inf> epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb', Paper presented at 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE, 1/12/04 pp. 247-252.

Photoluminescence of in<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>Sb <inf>1-y</inf> epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb. / Díaz-Reyes, J.; Cardona-Bedoya, J. A.; Mendoza-Álvarez, J.; Manrique-Moreno, S.; Galván-Arellano, M.; Herrera-Gómez, M. L.; Ramírez-Cruz, M. A.

2004. 247-252 Paper presented at 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Photoluminescence of inxGa1-xAsySb 1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb

AU - Díaz-Reyes, J.

AU - Cardona-Bedoya, J. A.

AU - Mendoza-Álvarez, J.

AU - Manrique-Moreno, S.

AU - Galván-Arellano, M.

AU - Herrera-Gómez, M. L.

AU - Ramírez-Cruz, M. A.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The influence of tellurium doping on the optical properties of In xGa1-xAsySb1-y epitaxial layers has been studied by photoluminescence (PL) spectroscopy. Layers were grown by liquid phase epitaxy on (100) GaSb substrates highly resistive under lattice-matching conditions. PL measurements were carried out by exciting the sample with the 488-nm line of an Ar-ion laser and varying the exciting power in the range between 40 and 200 mW. PL spectra were also measured at different temperatures in the range between 15 and 300 K. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centered at around 648.6 meV with a full width at half maximum (FWHM) of about 7 meV which is an evidence of the good crystalline quality of the epilayers and another dominant peak at 614 meV associated to band-to-acceptor. For higher Te-doping, the PL spectra showed the presence of band-to-band and donor-to-acceptor transitions which overlap as Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the energy peak of the PL spectra and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to the doping with Te in the epilayers, in the range 1016 to 1017 cm -3. ©2004 IEEE.

AB - The influence of tellurium doping on the optical properties of In xGa1-xAsySb1-y epitaxial layers has been studied by photoluminescence (PL) spectroscopy. Layers were grown by liquid phase epitaxy on (100) GaSb substrates highly resistive under lattice-matching conditions. PL measurements were carried out by exciting the sample with the 488-nm line of an Ar-ion laser and varying the exciting power in the range between 40 and 200 mW. PL spectra were also measured at different temperatures in the range between 15 and 300 K. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centered at around 648.6 meV with a full width at half maximum (FWHM) of about 7 meV which is an evidence of the good crystalline quality of the epilayers and another dominant peak at 614 meV associated to band-to-acceptor. For higher Te-doping, the PL spectra showed the presence of band-to-band and donor-to-acceptor transitions which overlap as Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the energy peak of the PL spectra and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to the doping with Te in the epilayers, in the range 1016 to 1017 cm -3. ©2004 IEEE.

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Díaz-Reyes J, Cardona-Bedoya JA, Mendoza-Álvarez J, Manrique-Moreno S, Galván-Arellano M, Herrera-Gómez ML et al. Photoluminescence of in<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>Sb <inf>1-y</inf> epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb. 2004. Paper presented at 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE, .