Photoluminescence and Raman spectroscopy in porous SiC

T. V. Torchynska, A. Díaz Cano, S. Jiménez Sandoval, M. Dybic, S. Ostapenko, M. Mynbaeva

Research output: Contribution to journalConference articlepeer-review

26 Scopus citations

Abstract

This paper presents results of porous SiC characterization using photoluminescence, Raman scattering and Atomic Force Microscopy. A comparative optical spectroscopy study on bulk SiC and porous SiC layers has shown a number of new features specific to nano-crystallite materials. The role of these effects on optical spectroscopy data in porous SiC accessed by photoluminescence and Raman scattering is discussed.

Translated title of the contributionFotoluminiscencia y espectroscopia Raman en SiC poroso
Original languageEnglish
Pages (from-to)536-538
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
StatePublished - Mar 2005

Keywords

  • Exciton
  • Phonon modes
  • Photoluminescence
  • Porous SiC
  • Raman scattering

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