TY - JOUR
T1 - Photoelectrochemical properties of chemically deposited cadmium sulphoselenide (CdS1-xSex /ITO) thin films
AU - Hernandez-Perez, Maria de los Angeles
AU - Sanchez-Ramirez, Elvia Angelica
AU - Castillo-Plata, Fredy Josealdo
AU - Manzo-Robledo, Arturo
AU - Aguilar-Hernandez, Jorge Ricardo
AU - Ezeta-Mejia, Araceli
AU - Sastre-Hernandez, Jorge
AU - Ramirez-Meneses, Esther
AU - Villanueva-Ibañez, Maricela
AU - Flores-Caballero, Aurora Amparo
N1 - Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2020/5
Y1 - 2020/5
N2 - CdS1-xSex thin films were deposited by Chemical Solution onto ITO/glass substrates at 90 °C. Structural, optical and photoelectrochemical properties of the ternary solid solution films were evaluated in this work. The results revealed good crystalline quality of the CBD films as an effect of ITO substrate and deposition temperature. Additionally, the dense, flat and homogeneous morphology of the films transformed into clusters of plate-like structures as selenium content increased. Polycrystalline thin films with crystallite size varying from 17 to 6 nm as a function of x were obtained. Hexagonal nanocrystallites of CdS1-xSex films were revealed by TEM images. Band gap variation as a function of x was described by a polynomial equation with an optical bowing coefficient of 0.331. High energy emission of the radiative recombination process was observed from all films even without thermal treatment. The photoelectrochemical results indicated the n-type semiconductor nature of the films; flat band potential, carrier density and photocurrent decrease as Se is incorporated into the CdS lattice.
AB - CdS1-xSex thin films were deposited by Chemical Solution onto ITO/glass substrates at 90 °C. Structural, optical and photoelectrochemical properties of the ternary solid solution films were evaluated in this work. The results revealed good crystalline quality of the CBD films as an effect of ITO substrate and deposition temperature. Additionally, the dense, flat and homogeneous morphology of the films transformed into clusters of plate-like structures as selenium content increased. Polycrystalline thin films with crystallite size varying from 17 to 6 nm as a function of x were obtained. Hexagonal nanocrystallites of CdS1-xSex films were revealed by TEM images. Band gap variation as a function of x was described by a polynomial equation with an optical bowing coefficient of 0.331. High energy emission of the radiative recombination process was observed from all films even without thermal treatment. The photoelectrochemical results indicated the n-type semiconductor nature of the films; flat band potential, carrier density and photocurrent decrease as Se is incorporated into the CdS lattice.
KW - Cadmium sulphoselenide thin films
KW - Chemical solution deposition
KW - II-VI semiconductors
KW - Photoelectrochemical properties
UR - http://www.scopus.com/inward/record.url?scp=85079895681&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2020.109277
DO - 10.1016/j.vacuum.2020.109277
M3 - Artículo
AN - SCOPUS:85079895681
SN - 0042-207X
VL - 175
JO - Vacuum
JF - Vacuum
M1 - 109277
ER -