Oxidation of ZnO thin films during pulsed laser deposition process

E. De Posada, L. Moreira, J. Pérez De La Cruz, M. Arronte, L. V. Ponce, T. Flores, J. G. Lunney

Research output: Contribution to journalArticle

Abstract

Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited on (001) sapphire substrates at 400 °C, at two different oxygen pressures (0·3 and 0·4 mbar) and two different target-substrate distances (30 and 40 mm). It is observed that in order to obtain good quality in the photoluminescence of the films, associated with oxygen stoichiometry, it is needed to maximize the time during which the plasma remains in contact with the growing film (plasma residence time), which is achieved by selecting suitable combinations of oxygen pressures and target to substrate distances. It is also discussed that for the growth parameters used, the higher probability for ZnO films growth results from the oxidation of Zn deposited on the substrate and such process takes place during the time that the plasma is in contact with the substrate. Moreover, it is observed that maximizing the plasma residence time over the growing film reduces the rate of material deposition, favouring the surface diffusion of adatoms, which favours both Zn-O reaction and grain growth. © Indian Academy of Sciences.
Original languageAmerican English
Pages (from-to)385-388
Number of pages346
JournalBulletin of Materials Science
DOIs
StatePublished - 1 Jun 2013

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Pulsed laser deposition
Lasers
Film growth
Thin films
Oxidation
Substrates
Plasmas
Oxygen
Growth
Pressure
Aluminum Oxide
Adatoms
Surface diffusion
Grain growth
Sapphire
Stoichiometry
Photoluminescence

Cite this

De Posada, E., Moreira, L., Pérez De La Cruz, J., Arronte, M., Ponce, L. V., Flores, T., & Lunney, J. G. (2013). Oxidation of ZnO thin films during pulsed laser deposition process. Bulletin of Materials Science, 385-388. https://doi.org/10.1007/s12034-013-0472-1
De Posada, E. ; Moreira, L. ; Pérez De La Cruz, J. ; Arronte, M. ; Ponce, L. V. ; Flores, T. ; Lunney, J. G. / Oxidation of ZnO thin films during pulsed laser deposition process. In: Bulletin of Materials Science. 2013 ; pp. 385-388.
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De Posada, E, Moreira, L, Pérez De La Cruz, J, Arronte, M, Ponce, LV, Flores, T & Lunney, JG 2013, 'Oxidation of ZnO thin films during pulsed laser deposition process', Bulletin of Materials Science, pp. 385-388. https://doi.org/10.1007/s12034-013-0472-1

Oxidation of ZnO thin films during pulsed laser deposition process. / De Posada, E.; Moreira, L.; Pérez De La Cruz, J.; Arronte, M.; Ponce, L. V.; Flores, T.; Lunney, J. G.

In: Bulletin of Materials Science, 01.06.2013, p. 385-388.

Research output: Contribution to journalArticle

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De Posada E, Moreira L, Pérez De La Cruz J, Arronte M, Ponce LV, Flores T et al. Oxidation of ZnO thin films during pulsed laser deposition process. Bulletin of Materials Science. 2013 Jun 1;385-388. https://doi.org/10.1007/s12034-013-0472-1