Optical, structural, and electrical characteristics of ZnO films co-doped with Al and In elements for TCO applications

B. El Filali, T. V. Torchynska, I. Ch Ballardo Rodríguez, J. Douda, G. Polupan, L. Shcherbyna

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The optical, structural, and electrical characteristics of ZnO films co-doped with Al and In elements are investigated. The films were prepared by spray pyrolysis with a permanent In content and Al concentrations of 0.5–3.5 at.%. The film structure was wurtzite and a transmittance of 89–90% was detected in the visible spectral range. By doping atoms with lower (Al) and larger (In) ion radii compared to Zn, residual stresses are reduced, allowing the self-compensating process to shift toward higher donor concentrations and achieve electrical resistivity of 3.0 × 10−3 Ω cm. Reasons for the non-monotonic changes of characteristics are discussed. Graphical abstract: [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)819-823
Number of pages5
JournalMRS Communications
Volume12
Issue number5
DOIs
StatePublished - Oct 2022

Keywords

  • Dopant
  • Elastic properties
  • Electrical properties
  • Transparent conductor

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