Abstract
The optical, structural, and electrical characteristics of ZnO films co-doped with Al and In elements are investigated. The films were prepared by spray pyrolysis with a permanent In content and Al concentrations of 0.5–3.5 at.%. The film structure was wurtzite and a transmittance of 89–90% was detected in the visible spectral range. By doping atoms with lower (Al) and larger (In) ion radii compared to Zn, residual stresses are reduced, allowing the self-compensating process to shift toward higher donor concentrations and achieve electrical resistivity of 3.0 × 10−3 Ω cm. Reasons for the non-monotonic changes of characteristics are discussed. Graphical abstract: [Figure not available: see fulltext.].
Original language | English |
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Pages (from-to) | 819-823 |
Number of pages | 5 |
Journal | MRS Communications |
Volume | 12 |
Issue number | 5 |
DOIs | |
State | Published - Oct 2022 |
Keywords
- Dopant
- Elastic properties
- Electrical properties
- Transparent conductor