TY - JOUR
T1 - Optical characterization of Zn-doped In0.14Ga 0.86As0.13Sb0.87 layers grown by liquid phase epitaxy
AU - Díaz-Reyes, Joel
AU - Rodríguez-Fragoso, Patricia
AU - Mendoza-Álvarez, Julio Gregorio
PY - 2013/2
Y1 - 2013/2
N2 - Quaternary layers were grown by liquid phase epitaxy on (1 0 0) GaSb substrates under lattice-matching conditions. The low-temperature photoluminescence of p-type InxGa1-xAsySb 1-y was obtained as a function of incorporated zinc concentration. The photoluminescence spectra were interpreted using a model which takes into account nonparabolicity of the valence band. Calculations of the peak position and photoluminescence transitions were performed. Both the band filling as well as band tailing due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly account for the observed features of photoluminescence spectra. It is proposed that low-temperature photoluminescence band-to-band energy transition can be used to obtain the carrier concentration in p-type InxGa1-xAsySb1-y. This method could be used to estimate free carrier concentration ranging from 6.036×1016 to 1.350×1018 cm-3.
AB - Quaternary layers were grown by liquid phase epitaxy on (1 0 0) GaSb substrates under lattice-matching conditions. The low-temperature photoluminescence of p-type InxGa1-xAsySb 1-y was obtained as a function of incorporated zinc concentration. The photoluminescence spectra were interpreted using a model which takes into account nonparabolicity of the valence band. Calculations of the peak position and photoluminescence transitions were performed. Both the band filling as well as band tailing due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly account for the observed features of photoluminescence spectra. It is proposed that low-temperature photoluminescence band-to-band energy transition can be used to obtain the carrier concentration in p-type InxGa1-xAsySb1-y. This method could be used to estimate free carrier concentration ranging from 6.036×1016 to 1.350×1018 cm-3.
KW - III-V semiconductors growth
KW - InGaAsSb semiconductors
KW - Novel materials and technological advances for photonics
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=84869492384&partnerID=8YFLogxK
U2 - 10.1016/j.jlumin.2012.09.001
DO - 10.1016/j.jlumin.2012.09.001
M3 - Artículo
SN - 0022-2313
VL - 134
SP - 126
EP - 131
JO - Journal of Luminescence
JF - Journal of Luminescence
ER -