InAs layers with thickness of ∼ 1 monolayer (δ-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the δ-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs δ-layers embedded in between 60 nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width. © 2008 Elsevier Ltd. All rights reserved.
Hernández-Rosas, J., Mendoza-Álvarez, J. G., Gallardo-Hernández, S., Cruz-Hernández, E., Rojas-Ramírez, J. S., & López-López, M. (2008). Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures. Microelectronics Journal, 1284-1285. https://doi.org/10.1016/j.mejo.2008.01.062