Abstract
The effect of microwave irradiation on single metal oxides was investigated. The oxides usually are isolators and the oscillating electric field lead to insufficient to induce charge movements to allow their heating through the loss tangents mechanism in the microwave region. XRD powder patterns of the irradiated samples showed the occurence of pronounced structural transformations related to redox reactions. The results show that the microwave irradiation of semiconductor metal oxides lead to rapid heating but without modify the physical nature of the processes involved in their structural transformation and redox reaction on heating.
| Original language | English |
|---|---|
| Pages (from-to) | 5331-5334 |
| Number of pages | 4 |
| Journal | Journal of Materials Science |
| Volume | 40 |
| Issue number | 19 |
| DOIs | |
| State | Published - Oct 2005 |
| Externally published | Yes |