TY - JOUR
T1 - New window materials used as heterojunction partners on CdTe solar cells
AU - Contreras-Puente, G.
AU - Vigil, O.
AU - Ortega-López, M.
AU - Morales-Acevedo, A.
AU - Vidal, J.
AU - Albor-Aguilera, M. L.
N1 - Funding Information:
This work was partially supported by the Mexican Agency CONACyT. One of us (O.V.) acknowledges CONACyT for its hospitality.
PY - 2000/2/21
Y1 - 2000/2/21
N2 - We present in this work the processing and characterization of two semiconductor thin films (ZnS and ZnxCd1-xO) grown by chemical bath deposition (CBD), and used as heterojunction partners on CSVT-CdTe films. The photovoltaic properties of the ZnxCd1-xO/CdTe heterojunction are reported here for the first time. The analysis of the basic properties of the films was carried out by standard optical and electrical characterization techniques. The heterojunction systems were studied by means of I-V characteristics spectral response and quasi-static C-V measurements. Short-circuit currents of 8.9 and 22 mA/cm2, open-circuit voltages of 0.489 V and 0.324 V, fill factors of 0.29 and 0.42 and conversion efficiencies of 1.26 and 3.12% were obtained for SnO2/Zn0.9Cd0.1/CdTe and SnO2/ZnS/CdTe, respectively, under normalized 100 mW/cm2 illumination (AM1).
AB - We present in this work the processing and characterization of two semiconductor thin films (ZnS and ZnxCd1-xO) grown by chemical bath deposition (CBD), and used as heterojunction partners on CSVT-CdTe films. The photovoltaic properties of the ZnxCd1-xO/CdTe heterojunction are reported here for the first time. The analysis of the basic properties of the films was carried out by standard optical and electrical characterization techniques. The heterojunction systems were studied by means of I-V characteristics spectral response and quasi-static C-V measurements. Short-circuit currents of 8.9 and 22 mA/cm2, open-circuit voltages of 0.489 V and 0.324 V, fill factors of 0.29 and 0.42 and conversion efficiencies of 1.26 and 3.12% were obtained for SnO2/Zn0.9Cd0.1/CdTe and SnO2/ZnS/CdTe, respectively, under normalized 100 mW/cm2 illumination (AM1).
UR - http://www.scopus.com/inward/record.url?scp=0033896495&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(99)00806-8
DO - 10.1016/S0040-6090(99)00806-8
M3 - Artículo de la conferencia
SN - 0040-6090
VL - 361
SP - 378
EP - 382
JO - Thin Solid Films
JF - Thin Solid Films
T2 - The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics
Y2 - 1 June 1999 through 4 June 1999
ER -