Negative spin polarization in AlGaAs photoluminescence

A. M. Gilinsky, A. Winter, C. Mejía-García, H. Pascher, K. S. Zhuravlev, A. V. Efanov, E. V. Kozhemyakina

Research output: Contribution to conferencePaperResearch

3 Citations (Scopus)

Abstract

Optical orientation of carrier spins has been studied in pure direct-gap AlxGa1-xAs alloys (x up to 15%). It is shown that optical excitation with circularly-polarized light with quanta energy in a narrow range (less than 1.6 meV) just above the free exciton transition results in the appearance of negative circular polarization of near-band edge photoluminescence (PL), which indicates a reversal of the spin orientation direction. The PL polarization degree becomes negative on all the excitonic transitions in the spectrum, free as well as bound. Carrier spin kinetics observed using the Hanle technique shows insignificant modification under the resonant excitation. The resonant switching of PL polarization seen in the excitation spectrum points to a change in the dominating carrier generation channel from heavy-hole to light-hole. The change is attributed to the influence of mechanical stress between the ternary epitaxial film and the substrate of GaAs. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Original languageAmerican English
Pages330-333
Number of pages296
DOIs
StatePublished - 30 Jun 2008
EventPhysica Status Solidi (C) Current Topics in Solid State Physics -
Duration: 27 May 2010 → …

Conference

ConferencePhysica Status Solidi (C) Current Topics in Solid State Physics
Period27/05/10 → …

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Spin polarization
aluminum gallium arsenides
Photoluminescence
photoluminescence
polarization
Polarization
excitation
Circular polarization
Photoexcitation
Epitaxial films
Light polarization
circular polarization
Electron transitions
Excitons
polarized light
excitons
Kinetics
kinetics
Substrates
energy

Cite this

Gilinsky, A. M., Winter, A., Mejía-García, C., Pascher, H., Zhuravlev, K. S., Efanov, A. V., & Kozhemyakina, E. V. (2008). Negative spin polarization in AlGaAs photoluminescence. 330-333. Paper presented at Physica Status Solidi (C) Current Topics in Solid State Physics, . https://doi.org/10.1002/pssc.200776586
Gilinsky, A. M. ; Winter, A. ; Mejía-García, C. ; Pascher, H. ; Zhuravlev, K. S. ; Efanov, A. V. ; Kozhemyakina, E. V. / Negative spin polarization in AlGaAs photoluminescence. Paper presented at Physica Status Solidi (C) Current Topics in Solid State Physics, .296 p.
@conference{793f8deefdce45c4a357490be89ae1f7,
title = "Negative spin polarization in AlGaAs photoluminescence",
abstract = "Optical orientation of carrier spins has been studied in pure direct-gap AlxGa1-xAs alloys (x up to 15{\%}). It is shown that optical excitation with circularly-polarized light with quanta energy in a narrow range (less than 1.6 meV) just above the free exciton transition results in the appearance of negative circular polarization of near-band edge photoluminescence (PL), which indicates a reversal of the spin orientation direction. The PL polarization degree becomes negative on all the excitonic transitions in the spectrum, free as well as bound. Carrier spin kinetics observed using the Hanle technique shows insignificant modification under the resonant excitation. The resonant switching of PL polarization seen in the excitation spectrum points to a change in the dominating carrier generation channel from heavy-hole to light-hole. The change is attributed to the influence of mechanical stress between the ternary epitaxial film and the substrate of GaAs. {\circledC} 2008 WILEY-VCH Verlag GmbH & Co. KGaA.",
author = "Gilinsky, {A. M.} and A. Winter and C. Mej{\'i}a-Garc{\'i}a and H. Pascher and Zhuravlev, {K. S.} and Efanov, {A. V.} and Kozhemyakina, {E. V.}",
year = "2008",
month = "6",
day = "30",
doi = "10.1002/pssc.200776586",
language = "American English",
pages = "330--333",
note = "Physica Status Solidi (C) Current Topics in Solid State Physics ; Conference date: 27-05-2010",

}

Gilinsky, AM, Winter, A, Mejía-García, C, Pascher, H, Zhuravlev, KS, Efanov, AV & Kozhemyakina, EV 2008, 'Negative spin polarization in AlGaAs photoluminescence' Paper presented at Physica Status Solidi (C) Current Topics in Solid State Physics, 27/05/10, pp. 330-333. https://doi.org/10.1002/pssc.200776586

Negative spin polarization in AlGaAs photoluminescence. / Gilinsky, A. M.; Winter, A.; Mejía-García, C.; Pascher, H.; Zhuravlev, K. S.; Efanov, A. V.; Kozhemyakina, E. V.

2008. 330-333 Paper presented at Physica Status Solidi (C) Current Topics in Solid State Physics, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - Negative spin polarization in AlGaAs photoluminescence

AU - Gilinsky, A. M.

AU - Winter, A.

AU - Mejía-García, C.

AU - Pascher, H.

AU - Zhuravlev, K. S.

AU - Efanov, A. V.

AU - Kozhemyakina, E. V.

PY - 2008/6/30

Y1 - 2008/6/30

N2 - Optical orientation of carrier spins has been studied in pure direct-gap AlxGa1-xAs alloys (x up to 15%). It is shown that optical excitation with circularly-polarized light with quanta energy in a narrow range (less than 1.6 meV) just above the free exciton transition results in the appearance of negative circular polarization of near-band edge photoluminescence (PL), which indicates a reversal of the spin orientation direction. The PL polarization degree becomes negative on all the excitonic transitions in the spectrum, free as well as bound. Carrier spin kinetics observed using the Hanle technique shows insignificant modification under the resonant excitation. The resonant switching of PL polarization seen in the excitation spectrum points to a change in the dominating carrier generation channel from heavy-hole to light-hole. The change is attributed to the influence of mechanical stress between the ternary epitaxial film and the substrate of GaAs. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - Optical orientation of carrier spins has been studied in pure direct-gap AlxGa1-xAs alloys (x up to 15%). It is shown that optical excitation with circularly-polarized light with quanta energy in a narrow range (less than 1.6 meV) just above the free exciton transition results in the appearance of negative circular polarization of near-band edge photoluminescence (PL), which indicates a reversal of the spin orientation direction. The PL polarization degree becomes negative on all the excitonic transitions in the spectrum, free as well as bound. Carrier spin kinetics observed using the Hanle technique shows insignificant modification under the resonant excitation. The resonant switching of PL polarization seen in the excitation spectrum points to a change in the dominating carrier generation channel from heavy-hole to light-hole. The change is attributed to the influence of mechanical stress between the ternary epitaxial film and the substrate of GaAs. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45749120677&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=45749120677&origin=inward

U2 - 10.1002/pssc.200776586

DO - 10.1002/pssc.200776586

M3 - Paper

SP - 330

EP - 333

ER -

Gilinsky AM, Winter A, Mejía-García C, Pascher H, Zhuravlev KS, Efanov AV et al. Negative spin polarization in AlGaAs photoluminescence. 2008. Paper presented at Physica Status Solidi (C) Current Topics in Solid State Physics, . https://doi.org/10.1002/pssc.200776586