Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power

T. V. Torchynska; H. M. Alfaro Lopez; J. L. Casas Espinola; P. G. Eliseev; A. Stintz; K. J. Malloy; R. Pena Sierra; Eu Shcherbina

doi:10.1016/j.mejo.2005.02.002

Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power

T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra, Eu Shcherbina

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

This paper presents the investigation of photoluminescence (PL), connected with ground (GS) and four excited states (1-4-ES) in highly uniform self-assembled InAs quantum dots (QDs) embedded into the In _0.15Ga_0.8As layers, using variable pumping power (P) in the range 10-1000 W/cm² at the temperature 12 K. The peak positions of GS and ES emission bands depend on an excitation light power. The energy differences between GS and 1-4ES optical transitions are not equidistant and equal to 48.8, 46.5, 40.3 and 33.4 meV, respectively, at highest power level. It was shown that many-particle effects in such high populated QDs is essential and the exchange/correlation and direct Coulomb contributions do not vanish in the investigated strong confined QDs.

Translated title of the contribution	Modificación del estado excitado múltiple en estructuras de puntos cuánticos InAs/InGaAs a alta potencia de excitación
Original language	English
Pages (from-to)	186-189
Number of pages	4
Journal	Microelectronics Journal
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.002
State	Published - Mar 2005

Keywords

Ground state
InAs quantum dots
Photoluminescence

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10.1016/j.mejo.2005.02.002

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@article{f86c787da9fa4ae2b416d1f8fc6bb5cf,

title = "Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power",

abstract = "This paper presents the investigation of photoluminescence (PL), connected with ground (GS) and four excited states (1-4-ES) in highly uniform self-assembled InAs quantum dots (QDs) embedded into the In 0.15Ga0.8As layers, using variable pumping power (P) in the range 10-1000 W/cm2 at the temperature 12 K. The peak positions of GS and ES emission bands depend on an excitation light power. The energy differences between GS and 1-4ES optical transitions are not equidistant and equal to 48.8, 46.5, 40.3 and 33.4 meV, respectively, at highest power level. It was shown that many-particle effects in such high populated QDs is essential and the exchange/correlation and direct Coulomb contributions do not vanish in the investigated strong confined QDs.",

keywords = "Ground state, InAs quantum dots, Photoluminescence",

author = "Torchynska, {T. V.} and {Alfaro Lopez}, {H. M.} and {Casas Espinola}, {J. L.} and Eliseev, {P. G.} and A. Stintz and Malloy, {K. J.} and {Pena Sierra}, R. and Eu Shcherbina",

note = "Funding Information: This work was partially supported by CONACYT (Projects 42436-U), as well as the International cooperation IPN, Mexico, CHTM, University of New Mexico, USA project and CGPI, IPN Mexico.",

year = "2005",

month = mar,

doi = "10.1016/j.mejo.2005.02.002",

language = "Ingl{\'e}s",

volume = "36",

pages = "186--189",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "3-6",

}

TY - JOUR

T1 - Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power

AU - Torchynska, T. V.

AU - Alfaro Lopez, H. M.

AU - Casas Espinola, J. L.

AU - Eliseev, P. G.

AU - Stintz, A.

AU - Malloy, K. J.

AU - Pena Sierra, R.

AU - Shcherbina, Eu

N1 - Funding Information: This work was partially supported by CONACYT (Projects 42436-U), as well as the International cooperation IPN, Mexico, CHTM, University of New Mexico, USA project and CGPI, IPN Mexico.

PY - 2005/3

Y1 - 2005/3

N2 - This paper presents the investigation of photoluminescence (PL), connected with ground (GS) and four excited states (1-4-ES) in highly uniform self-assembled InAs quantum dots (QDs) embedded into the In 0.15Ga0.8As layers, using variable pumping power (P) in the range 10-1000 W/cm2 at the temperature 12 K. The peak positions of GS and ES emission bands depend on an excitation light power. The energy differences between GS and 1-4ES optical transitions are not equidistant and equal to 48.8, 46.5, 40.3 and 33.4 meV, respectively, at highest power level. It was shown that many-particle effects in such high populated QDs is essential and the exchange/correlation and direct Coulomb contributions do not vanish in the investigated strong confined QDs.

AB - This paper presents the investigation of photoluminescence (PL), connected with ground (GS) and four excited states (1-4-ES) in highly uniform self-assembled InAs quantum dots (QDs) embedded into the In 0.15Ga0.8As layers, using variable pumping power (P) in the range 10-1000 W/cm2 at the temperature 12 K. The peak positions of GS and ES emission bands depend on an excitation light power. The energy differences between GS and 1-4ES optical transitions are not equidistant and equal to 48.8, 46.5, 40.3 and 33.4 meV, respectively, at highest power level. It was shown that many-particle effects in such high populated QDs is essential and the exchange/correlation and direct Coulomb contributions do not vanish in the investigated strong confined QDs.

KW - Ground state

KW - InAs quantum dots

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=29844441070&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.002

DO - 10.1016/j.mejo.2005.02.002

M3 - Artículo de la conferencia

AN - SCOPUS:29844441070

SN - 0026-2692

VL - 36

SP - 186

EP - 189

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-6

ER -

Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power

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Keywords

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