Morphology of nanostructured GaP on GaAs: Synthesis by the close-spaced vapor transport technique

Carlos Felipe, Fernando Chávez, Carlos Ángeles-Chávez, Enrique Lima, Oscar Goiz, Ramón Peña-Sierra

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Nanostructures of gallium phosphide (GaP) were fabricated through the close-spaced vapor transport technique (CSVT). Such nanostructures were grown on crystalline gallium arsenide (GaAs) by using a GaP powder source in the absence of any catalyst. Nanostructured GaP products were structurally and morphologically characterized by means of physicochemical and spectroscopic techniques, such as SEM, EDS, XRD, and NMR. Results showed that GaP structures present a nanoflower-like morphology. Indeed, these nanoflowers are constituted by numerous nanowires. The diameters of the GaP nanowires were in the interval of 80-300 nm, with lengths varying from several to tens of micrometers.

Original languageEnglish
Pages (from-to)127-131
Number of pages5
JournalChemical Physics Letters
Volume439
Issue number1-3
DOIs
StatePublished - 4 May 2007
Externally publishedYes

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