Morphology of nanostructured GaP on GaAs: Synthesis by the close-spaced vapor transport technique

Carlos Felipe, Fernando Chávez, Carlos Ángeles-Chávez, Enrique Lima, Oscar Goiz, Ramón Peña-Sierra

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Nanostructures of gallium phosphide (GaP) were fabricated through the close-spaced vapor transport technique (CSVT). Such nanostructures were grown on crystalline gallium arsenide (GaAs) by using a GaP powder source in the absence of any catalyst. Nanostructured GaP products were structurally and morphologically characterized by means of physicochemical and spectroscopic techniques, such as SEM, EDS, XRD, and NMR. Results showed that GaP structures present a nanoflower-like morphology. Indeed, these nanoflowers are constituted by numerous nanowires. The diameters of the GaP nanowires were in the interval of 80-300 nm, with lengths varying from several to tens of micrometers. © 2007.
Original languageAmerican English
Pages (from-to)127-131
Number of pages113
JournalChemical Physics Letters
DOIs
StatePublished - 4 May 2007
Externally publishedYes

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Gallium phosphide
gallium phosphides
gallium
Gallium arsenide
Vapors
vapors
Nanoflowers
synthesis
Nanowires
Nanostructures
nanowires
Powders
micrometers
Energy dispersive spectroscopy
nuclear magnetic resonance
Nuclear magnetic resonance
gallium arsenide
gallium phosphide
Crystalline materials
intervals

Cite this

Felipe, Carlos ; Chávez, Fernando ; Ángeles-Chávez, Carlos ; Lima, Enrique ; Goiz, Oscar ; Peña-Sierra, Ramón. / Morphology of nanostructured GaP on GaAs: Synthesis by the close-spaced vapor transport technique. In: Chemical Physics Letters. 2007 ; pp. 127-131.
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abstract = "Nanostructures of gallium phosphide (GaP) were fabricated through the close-spaced vapor transport technique (CSVT). Such nanostructures were grown on crystalline gallium arsenide (GaAs) by using a GaP powder source in the absence of any catalyst. Nanostructured GaP products were structurally and morphologically characterized by means of physicochemical and spectroscopic techniques, such as SEM, EDS, XRD, and NMR. Results showed that GaP structures present a nanoflower-like morphology. Indeed, these nanoflowers are constituted by numerous nanowires. The diameters of the GaP nanowires were in the interval of 80-300 nm, with lengths varying from several to tens of micrometers. {\circledC} 2007.",
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Morphology of nanostructured GaP on GaAs: Synthesis by the close-spaced vapor transport technique. / Felipe, Carlos; Chávez, Fernando; Ángeles-Chávez, Carlos; Lima, Enrique; Goiz, Oscar; Peña-Sierra, Ramón.

In: Chemical Physics Letters, 04.05.2007, p. 127-131.

Research output: Contribution to journalArticle

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AU - Felipe, Carlos

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AU - Ángeles-Chávez, Carlos

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AU - Goiz, Oscar

AU - Peña-Sierra, Ramón

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AB - Nanostructures of gallium phosphide (GaP) were fabricated through the close-spaced vapor transport technique (CSVT). Such nanostructures were grown on crystalline gallium arsenide (GaAs) by using a GaP powder source in the absence of any catalyst. Nanostructured GaP products were structurally and morphologically characterized by means of physicochemical and spectroscopic techniques, such as SEM, EDS, XRD, and NMR. Results showed that GaP structures present a nanoflower-like morphology. Indeed, these nanoflowers are constituted by numerous nanowires. The diameters of the GaP nanowires were in the interval of 80-300 nm, with lengths varying from several to tens of micrometers. © 2007.

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