TY - JOUR
T1 - Morphology of nanostructured GaP on GaAs
T2 - Synthesis by the close-spaced vapor transport technique
AU - Felipe, Carlos
AU - Chávez, Fernando
AU - Ángeles-Chávez, Carlos
AU - Lima, Enrique
AU - Goiz, Oscar
AU - Peña-Sierra, Ramón
PY - 2007/5/4
Y1 - 2007/5/4
N2 - Nanostructures of gallium phosphide (GaP) were fabricated through the close-spaced vapor transport technique (CSVT). Such nanostructures were grown on crystalline gallium arsenide (GaAs) by using a GaP powder source in the absence of any catalyst. Nanostructured GaP products were structurally and morphologically characterized by means of physicochemical and spectroscopic techniques, such as SEM, EDS, XRD, and NMR. Results showed that GaP structures present a nanoflower-like morphology. Indeed, these nanoflowers are constituted by numerous nanowires. The diameters of the GaP nanowires were in the interval of 80-300 nm, with lengths varying from several to tens of micrometers.
AB - Nanostructures of gallium phosphide (GaP) were fabricated through the close-spaced vapor transport technique (CSVT). Such nanostructures were grown on crystalline gallium arsenide (GaAs) by using a GaP powder source in the absence of any catalyst. Nanostructured GaP products were structurally and morphologically characterized by means of physicochemical and spectroscopic techniques, such as SEM, EDS, XRD, and NMR. Results showed that GaP structures present a nanoflower-like morphology. Indeed, these nanoflowers are constituted by numerous nanowires. The diameters of the GaP nanowires were in the interval of 80-300 nm, with lengths varying from several to tens of micrometers.
UR - http://www.scopus.com/inward/record.url?scp=34247376949&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2007.03.072
DO - 10.1016/j.cplett.2007.03.072
M3 - Artículo
SN - 0009-2614
VL - 439
SP - 127
EP - 131
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -