TY - JOUR
T1 - Modification of the crystalline structure of ZnO nanoparticles embedded within a SiO2 matrix due to thermal stress effects
AU - Garcia-Sotelo, Alejandra
AU - Avila-Meza, Mario
AU - Melendez-Lira, Miguel Angel
AU - Fernandez-Muñoz, Jose Luis
AU - Zelaya-Angel, Orlando
N1 - Publisher Copyright:
© 2019 Universidade Federal de Sao Carlos. All rights reserved.
PY - 2019
Y1 - 2019
N2 - Self-assembled nanocrystals of ZnO were embedded within a SiO2 matrix by a sequential deposit using reactive R.F. sputtering. The ZnO nanoparticles (NP's) were obtained by depositing a very thin layer (∼20 nm) of Zn on the bottom of the valleys of a first SiO2 rough surface and then covered by another SiO2 layer at 500 °C. The stress produced, due to the cooling process, by the SiO2 matrix on the ZnO NP's generates an unusual crystalline phase of ZnO. The crystal structure was determined by means of X ray diffraction patterns. The ZnO + SiO2 composite shows a transmittance higher than 80 % for wavelengths > 450 nm. Optical absorption allows to reveal the character and value of the optical band gap. Vibrational modes of the material were determined by Raman spectroscopy.
AB - Self-assembled nanocrystals of ZnO were embedded within a SiO2 matrix by a sequential deposit using reactive R.F. sputtering. The ZnO nanoparticles (NP's) were obtained by depositing a very thin layer (∼20 nm) of Zn on the bottom of the valleys of a first SiO2 rough surface and then covered by another SiO2 layer at 500 °C. The stress produced, due to the cooling process, by the SiO2 matrix on the ZnO NP's generates an unusual crystalline phase of ZnO. The crystal structure was determined by means of X ray diffraction patterns. The ZnO + SiO2 composite shows a transmittance higher than 80 % for wavelengths > 450 nm. Optical absorption allows to reveal the character and value of the optical band gap. Vibrational modes of the material were determined by Raman spectroscopy.
KW - II-VI semiconductor nanoparticles
KW - Raman spectroscopy
KW - Reactive R.F. sputtering
KW - Thermal expansion coefficient
UR - http://www.scopus.com/inward/record.url?scp=85084178796&partnerID=8YFLogxK
U2 - 10.1590/1980-5373-MR-2019-0105
DO - 10.1590/1980-5373-MR-2019-0105
M3 - Artículo
SN - 1516-1439
VL - 22
JO - Materials Research
JF - Materials Research
IS - 4
M1 - e20190105
ER -