Materials Science and Engineering B: Solid-State Materials for Advanced Technology

J. Mimila-Arroyo, E. Morales, A. Lusson

Research output: Contribution to conferencePaperResearch

1 Citation (Scopus)

Abstract

Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities. © 2012 Elsevier B.V.
Original languageAmerican English
Pages1487-1490
Number of pages4
DOIs
StatePublished - 20 Sep 2012
Externally publishedYes
Eventconference -
Duration: 20 Sep 2012 → …

Conference

Conferenceconference
Period20/09/12 → …

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materials science
engineering
solid state
electron mobility
photoconductivity
electrons
illumination
conductivity
probes
photons

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Mimila-Arroyo, J. ; Morales, E. ; Lusson, A. / Materials Science and Engineering B: Solid-State Materials for Advanced Technology. Paper presented at conference, .4 p.
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Mimila-Arroyo, J, Morales, E & Lusson, A 2012, 'Materials Science and Engineering B: Solid-State Materials for Advanced Technology' Paper presented at conference, 20/09/12, pp. 1487-1490. https://doi.org/10.1016/j.mseb.2012.02.013

Materials Science and Engineering B: Solid-State Materials for Advanced Technology. / Mimila-Arroyo, J.; Morales, E.; Lusson, A.

2012. 1487-1490 Paper presented at conference, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

AU - Mimila-Arroyo, J.

AU - Morales, E.

AU - Lusson, A.

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N2 - Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities. © 2012 Elsevier B.V.

AB - Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities. © 2012 Elsevier B.V.

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