TY - JOUR
T1 - Method to probe the electrical activity of dislocations in non-intentionally doped n-GaN
AU - Mimila-Arroyo, J.
AU - Morales, E.
AU - Lusson, A.
PY - 2012/9/20
Y1 - 2012/9/20
N2 - Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities.
AB - Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities.
KW - Dislocation
KW - Gallium nitride
KW - Passivation
UR - http://www.scopus.com/inward/record.url?scp=84866045677&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2012.02.013
DO - 10.1016/j.mseb.2012.02.013
M3 - Artículo
AN - SCOPUS:84866045677
SN - 0921-5107
VL - 177
SP - 1487
EP - 1490
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 16
ER -