Manganese oxide thin-films for current-signal sensing and thermal insulation

Manganese oxide thin-films for current-signal sensing and thermal insulation were synthesized by high-vacuum evaporation and thermal oxidation processes at low-temperature conditions. Structure-formation of the films with orthorhombic-partial structure of MnO₂/Mn₂O₃ was investigated by X-ray diffraction. Raman studies have demonstrated that thermal properties can be influenced by the symmetry of the Mn-O bonds and it associated with the dynamic Jahn-Teller distortion. Dynamic behavior of samples as a function of the frequency response to verify their performance as signal sensors was evaluated by resistive-inductive circuit (RL circuit). To demonstrate the thermal capability of samples from current-voltage (I-V) characteristics, a Schottky emission model was used.